Showing papers in "Diamond and Related Materials in 2000"

TL;DR: In this paper, the binding energy of the C1s and N1s XPS peaks in melamine (C3N6H6) was determined relative to the XPS peak for carbon contamination (adventitious carbon).

TL;DR: In this article, a carbon nanotube-based field emission display (FED) was fabricated using well-aligned nanotubes on a glass substrate by paste squeeze and surface rubbing techniques.

TL;DR: The semiconducting properties of phosphorus-doped diamond thin films grown using a metal-chamber-type microwave plasma-assisted chemical vapor deposition system have been investigated by Hall measurements over a wide temperature range.

TL;DR: The exceptional combination of mechanical, thermal, chemical and optical properties of diamond make this material an ideal choice for numerous applications in which materials are required to operate in adverse environments exposed to abrasion or chemical attack, or in situations requiring the dissipation of extreme levels of power such as windows for high power lasers as mentioned in this paper.

TL;DR: In this paper, a diamond peak at 1333 cm −1 was enhanced, while the D and G peak of graphite as well as photoluminescence was suppressed, compared with that measured by visible (514.5 nm) Raman.

TL;DR: In this article, the surface composition of diamond electrodes is linked to the electrochemical performance of diamond film electrodes and the extent to which changes in surface composition and electrode performance can be controlled and reversed by suitable plasma treatments is explored.

TL;DR: In this paper, the influence of negative bias voltage applied to substrates and the nitrogen background pressure (up to 10−3 Torr) on film properties was studied by scanning electron microscopy (SEM) and electron energy loss spectroscopy (EELS).

TL;DR: In this article, the authors measured the absorption and luminescence spectra of natural brown diamonds before and after high-pressure, high-temperature (HPHT) treatment at 1700-1800°C, and after HPHT treatment at 2025°C.

TL;DR: In this article, a diamond indenter was used and its actual shape determined by scanning force microscopy with a calibration grid, from the slope of the force-depth curve the Young's modulus as well as the hardness were obtained reflecting a very large hardness of 95 GPa and 117 GPa for the {100} and {111} crystal surfaces, respectively.

TL;DR: In this paper, the structure and defects in detonation synthesis of ultradisperse diamond (UDD) powders are analyzed in terms of the different structure of the shell of UDD particles, produced under different conditions.

TL;DR: In this article, the possibility of voltammetric study of electrochemical reactions occurring at high oxidation and high reduction potentials was demonstrated at diamond electrodes, taking histamine and carbon tetrachloride as respective examples.

TL;DR: In this article, the effects of various source gases on the friction and wear performance of diamond-like carbon (DLC) films produced from the source gases were investigated. And the authors described the anomalous nature and fundamental friction-and wear mechanisms of DLC films derived from gas discharge plasmas with very low to very high hydrogen content.

TL;DR: In this article, a chemical bond transformation from B N to B C was observed in BCN films synthesized using pulsed laser deposition (PLD), which was dominated by amorphous carbon phase and sp2 hybridized BN bonds.

TL;DR: In this paper, the authors measured the density of states of hydrogenated tetrahedral amorphous carbon (Ta-C:H) using scanning tunnelling spectroscopy and showed that hydrogen does not effuse significantly at temperatures less than 500°C and 700°C in films grown using acetylene.

TL;DR: As the boron incorporation level and the wavelength of the exciting laser were varied, this article observed systematic modifications of the Raman spectra of homoepitaxial diamond films.

TL;DR: The fabrication of carbon nanotube emitters with excellent emission properties is described in this paper, where a flat panel display using CNT thick films as electron emitters, which possessed a brightness as high as 800cd/m 2 under an applied field of 5V/μm, has been demonstrated.

TL;DR: In this paper, the authors used grazing-incidence X-ray reflectivity (XRR) to validate the density of a variety of amorphous carbon thin films derived from the valence plasmon in electron energy loss spectroscopy measurements.

TL;DR: In this article, three different ways are used to etch diamond {001} and {111} faces by oxidative methods: gas phase etching, dry oxygen, and liquid etching in molten potassium nitrate.

TL;DR: In this article, an electrical model of the surface conductive layer in diamond induced by hydrogen plasma treatment is proposed, where the hydrogen induced acceptors in diamond are separated from the surface by a separation layer characterised by dielectric constant e∼50 and thickness of about 30-50nm.

TL;DR: In this paper, the authors reviewed the optical and electron paramagnetic resonance (EPR) studies that have been carried out on diamonds containing nickel-related or cobalt-related defect centers.

TL;DR: In this article, diamond and DLC films were coated on carbide inserts by DC plasma jet CVD and vacuum cathode multi-arc deposition (VCAD), respectively, and the results showed that the wear life of diamond and DL-coated cutting inserts were prolonged by tens of times; the temperature of the cutting insert and cut material has been lowered and the processing quality of the workpiece improved.

TL;DR: In this article, the effect of adsorbate passivation of the surface dangling bonds and the formation of mutual chemical bonds as a consequence of surface reconstruction on the surface of diamond is discussed.

TL;DR: In this paper, the step flow dynamics during homoepitaxial diamond deposition on vicinal {001} diamond surfaces in the presence of nitrogen impurities in the gas phase is investigated by experiments as well as by computer simulations.

TL;DR: In this paper, BN, AlN and GaN were grown at a temperature of 800°C and a nitrogen pressure of 100 atm, relatively lower than that required by many flux and melt growth methods.

TL;DR: In this paper, the growth of sulfur-doped diamond crystals via microwave plasma assisted chemical vapor deposition by introducing hydrogen sulfide (H 2 S) into the gas phase was investigated.

TL;DR: In this article, the main target has been the reproducible growth of micropipe free substrate material and thick epitaxial layers for device applications and the purity of the layers has been of special interest.

TL;DR: In this paper, the influence of the synthesis conditions and purification conditions on the properties of UFD were analyzed and the results showed that UFD can decrease the coefficient of friction of the composite by 30%, and raise the nucleation density in CVD diamond films by 2-3 times.

TL;DR: In this paper, the authors studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature, and found that the conductivity changes while the sp 3 content and optical gap remain constant.

TL;DR: In this paper, smooth nanocrystalline diamond thin films with rms surface roughness of ∼17 nm were grown on silicon substrates at 600°C using biased enhanced growth (BEG) in microwave plasma chemical vapor deposition (MPCVD).

TL;DR: In this paper, the mechanical and tribological properties of carbon nitride (CN(X) films on orthopedic substrates were evaluated by ball-on-disk tests in dry and lubricated conditions.