Journal ArticleDOI
A 0.9-V supply, 16.2 nW, fully MOSFET resistorless bandgap reference using sub-threshold operation
TLDR
In this article, a nano-watt bandgap voltage reference (BGR) was proposed to provide a lowvoltage and low power BGR, the circuit has been biased in the sub-threshold region; thereby, drawing a few nano-amperes current from the source, has been achieved.Abstract:
A nano-watt bandgap voltage reference (BGR) is presented. To provide a low-voltage and low-power BGR, the circuit has been biased in the sub-threshold region; thereby, drawing a few nano-amperes current from the source, has been achieved. In order to reduce die area and also power consumption, instead of resistor, transistor is used. To generate PTAT voltage, self-cascode composite structure is used for the transistors. The results from post-layout simulation using 0.18-μm standard CMOS technology show that the proposed BGR circuit generates a reference voltage of 625 mV, obtaining temperature coefficient of 13 ppm/ °C in the temperature range of − 25 °C to 110 °C. The simulated power supply rejection ratio is 42 dB. Fully designed with MOS transistors, the circuit draws 18 nA from a 0.9-V supply. The active area of the proposed BGR is 0.00067 mm2.read more
Citations
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Journal ArticleDOI
0.7-V supply, 21-nW All–MOS voltage reference using a MOS-Only current-driven reference core in digital CMOS
TL;DR: A nano-power all-MOS voltage reference circuit is proposed without any integrated resistor or bipolar transistor to generate multiple voltage sources in inexpensive digital CMOS technologies.
Journal ArticleDOI
Sub 1-V supply voltage-reference based on mutual temperature cancellation of VT and VTH
TL;DR: In this article, a non-bandgap CMOS voltage reference with sub one-volt power supply is proposed and simulated in 0.18μm standard CMOS technology and the nominal output voltage reference is about 0.5-V with the temperature coefficient of 36-ppm/°C across a temperature range of 0-120°C at 0.9-V of supply.
Proceedings Article
A Low-Voltage CMOS Bandgap Reference
TL;DR: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V.
Posted ContentDOI
MOS only nano-watt sub-bandgap voltage reference
TL;DR: In this paper , a voltage divider consisting of five similar MOSFET transistors is presented, and the resulting output voltage will be one-fifth of the complementary to absolute temperature (CTAT) voltage and four-fifths of the PTAT voltage.
Proceedings ArticleDOI
Nano-Watt Voltage References for High Supply Voltages
TL;DR: In this paper , the authors present two voltage reference circuits that operate in the supply voltage range of 7-17V and 9-15V while consuming less than 3.5 nA at 17V supply voltage and 8.47 NA at 15V input voltage.
References
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Book
Design of Analog CMOS Integrated Circuits
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Journal ArticleDOI
A CMOS bandgap reference circuit with sub-1-V operation
TL;DR: In this paper, the authors proposed a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, and measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.
Book
Analog design essentials
TL;DR: In this article, the authors compare MOST and Bipolar transistor models, including Amplifiers, Source followers, and Cascodes, with differentially voltage and current amplifiers.
Book
Sub-threshold Design for Ultra Low-Power Systems
TL;DR: The EKV Model of the MOS Transistor is used as a model for low-voltage circuit design and analog Circuits in Weak Inversion are studied.
Journal ArticleDOI
Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits
Igor M. Filanovsky,Ahmed Allam +1 more
TL;DR: In this paper, the conditions under which this effect occurs, and stability of this bias point are investigated, and verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.