Journal ArticleDOI
Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits
Igor M. Filanovsky,Ahmed Allam +1 more
TLDR
In this paper, the conditions under which this effect occurs, and stability of this bias point are investigated, and verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.Abstract:
Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature. The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.read more
Citations
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Journal ArticleDOI
A 300 nW, 15 ppm/ $^{\circ}$ C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs
TL;DR: A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology and would be suitable for use in subthreshold-operated, power-aware LSIs.
Journal ArticleDOI
A low-voltage low-power voltage reference based on subthreshold MOSFETs
TL;DR: In this paper, a low-voltage low-power CMOS voltage reference independent of temperature is presented based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a sub-threshold MCFET, which exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/spl deg/C.
Journal ArticleDOI
A time-to-digital-converter-based CMOS smart temperature sensor
TL;DR: A time-to-digital-converter-based CMOS smart temperature sensor without a voltage/current analog- to-digital converter (ADC) or bandgap reference is proposed for high-accuracy portable applications.
Journal ArticleDOI
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
TL;DR: A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 m CMOS technology with accurate subthreshold design.
Proceedings ArticleDOI
A time-to-digital-converter-based CMOS smart temperature sensor
TL;DR: A time-to-digital-converter-based CMOS smart temperature sensor is proposed for high-accuracy portable applications and its effective resolution is better than 0.15/spl deg/C, the power consumption is 10 /spl mu/W.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Book
CMOS Circuit Design, Layout, and Simulation
TL;DR: Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.
Book
Analog MOS Integrated Circuits for Signal Processing
Roubik Gregorian,Gabor C. Temes +1 more
TL;DR: In this article, the authors present an overview of the non-ideal effects in Switched-Capacitor Circuits, as well as their application in switch-capacitor circuits.
Book
Design of analog integrated circuits and systems
Kenneth R. Laker,Willy Sansen +1 more
TL;DR: MOS transistor models bipolar transistor models feedback and sensitivity in analogue integrated circuits elementary transistor stages behavioural modelling of operational and transconductance amplifiers operational amplifier design fundamentals of continuous-time and sampled-data active filters design and implementation of integrated active filters.