Journal ArticleDOI
A model of current—Voltage characteristics in polycrystalline silicon thin-film transistors
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TLDR
In this article, an empirical model for the currentvoltage characteristics of polycrystalline silicon thin-film transistors is presented based on the premise that the potential barrier height at the grain boundary depends on both the gate and drain voltages.Abstract:
An empirical model for the current-voltage characteristics of polycrystalline silicon thin-film transistors is presented. The model was constructed based on the premise that the potential barrier height at the grain boundary depends on both the gate and drain voltages. Polycrystalline silicon film transistors having a coplanar structure were fabricated. Measurements demonstrated excellent agreement with calculations for n-channel devices. In addition, carrier-trap density and grain-boundary mobility, which have strong influences on electrical characteristics, were obtained from this model.read more
Citations
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Journal ArticleDOI
An analytical model for the above-threshold characteristics of polysilicon thin-film transistors
TL;DR: In this article, an analytical model for the above-threshold characteristics of long-channel, small-grain and thin channel polysilicon thin film transistors (TFT's) is presented.
Journal ArticleDOI
A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors
TL;DR: In this article, a physical model considering the effects of grain boundaries on the turn-on behavior of polysilicon thin-film transistors (poly-Si TFTs) is presented.
Journal ArticleDOI
Unified model for short-channel poly-Si TFTs
TL;DR: In this article, a unified model for long and short-channel polysilicon thin-film transistors (poly-Si TFTs) suitable for circuit simulation is presented.
Journal ArticleDOI
Material properties and characteristics of polysilicon transistors for large area electronics
P. Migliorato,D.B. Meakin +1 more
TL;DR: In this article, a new model for the characteristics of polysilicon TFTs is deduced, which leads to an analytical expression for the threshold voltage, the subthreshold and the above threshold regime.
Journal ArticleDOI
CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications
W. Wondmagegn,Israel Mejia,A. L. Salas-Villasenor,H. J. Stiegler,Manuel Quevedo-Lopez,Ronald J. Pieper,Bruce E. Gnade +6 more
TL;DR: In this paper, organic and inorganic thin film transistors (TFTs) are fabricated, simulated, and tested for circuit applications and two-dimensional finite element simulation methodology is used.
References
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Journal ArticleDOI
Conductivity behavior in polycrystalline semiconductor thin film transistors
TL;DR: In this article, the effect of thermal annealing on implanted and unimplanted CdSe TFTs has been studied and the model appears to give a general description of the conductivity behavior in polycrystallin...
Journal ArticleDOI
Anomalous leakage current in LPCVD PolySilicon MOSFET's
TL;DR: The anomalous leakage current I L in LPCVD polysilicon MOSFETs is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed.
Journal ArticleDOI
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
Satwinder Malhi,Hisashi Shichijo,Sanjay K. Banerjee,R. Sundaresan,M. Elahy,Gordon P. Pollack,William F. Richardson,Ashwin H. Shah,L.R. Hite,R.H. Womack,Pallab K. Chatterjee,H.W. Lam +11 more
TL;DR: In this paper, a design methodology was developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, while requiring no nonstandard materials, processes, and tools.
Journal ArticleDOI
Carrier transport at grain boundaries in semiconductors
TL;DR: In this article, the characteristics of dislocations in dislocation arrays and grain boundaries as they appear in imperfect and polycrystalline semiconductors are described and discussed as part of the metallurgy of bicrystal interfaces.
Journal ArticleDOI
The thin film transistor—A late flowering bloom
TL;DR: The history of the transistor was traced from early and unsuccessful Bell Labs experiments, through its brief resurgence in the 1960's as a competitor to the MOSFET, its second disappearance from public view followed by years of hibernation at Westinghouse Labs, its emergence in the 1970's, as a candidate for forming very large area integrated circuits for flat panel displays, leading to the present era of intensive, worldwide exploitation as a device which has at last found a suitable problem to solve as mentioned in this paper.