Journal ArticleDOI
A new device architecture suitable for high-resolution and high-performance image sensors
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TLDR
In this article, a device architecture for building high-performance and high-resolution image sensors suitable for consumer TV camera applications is introduced, where the sensor elements are junction field effect transistors that are organized in an array with their gates floating and capacitively coupled to common horizontal address line.Abstract:
A device architecture for building high-performance and high-resolution image sensors suitable for consumer TV camera applications is introduced. The sensor elements are junction field-effect transistors that are organized in an array with their gates floating and capacitively coupled to common horizontal address line. The photogenerated signal is sampled one line at a time, processed to remove the element-to-element nonuniformities, and stored in a buffer for subsequent readout. The concept, which includes an intrinsic exposure control, is demonstrated on a test image sensor that has an 8-mm sensing area diagonal and 580 (H)*488 (V) pixels. The key performance parameters, in addition to a high packing density of sensing elements with a unique hexagonal shape, include high signal uniformity, low dark current, good light sensitivity, high blooming overload protection, and no image smear. The discussion covers the design and operation of the basic image-sensing element, the architecture of the array, and the operation of the on-chip circuits needed for addressing and processing of generated signals. The overall device performance is demonstrated by typical device characterization results. >read more
Citations
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Journal ArticleDOI
CMOS image sensors: electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Patent
Active pixel sensor with intra-pixel charge transfer
TL;DR: In this paper, an imaging device is formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary MOS semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate and a charge coupled device section formed on the substrate adjacent the photrogate having a sensing node connected to the output transistor and at least one charge coupled
Journal ArticleDOI
CMOS active pixel image sensors for highly integrated imaging systems
Sunetra K. Mendis,Sabrina E. Kemeny,R.C. Gee,Bedabrata Pain,Craig Staller,Quiesup Kim,Eric R. Fossum +6 more
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Patent
CMOS active pixel sensor type imaging system on a chip
Eric R. Fossum,Robert H. Nixon +1 more
TL;DR: In this paper, a single substrate device is formed to have an image acquistition device and a controller, and the controller on the substrate controls the system operation, which can be used for image acquisition.
Proceedings ArticleDOI
Active Pixel Sensors: Are CCD's Dinosaurs?
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
References
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Journal ArticleDOI
Smear reduction in the interline CCD image sensor
Nobukazu Teranishi,Y. Ishihara +1 more
TL;DR: In this paper, an undesirable smear in a vertical-overflow-drain interline CCD image sensor (VOD IL-CCD) has been reduced by using a new structure, where the oxide thickness under the aluminum photoshield is as small as 0.2 µm.
Proceedings ArticleDOI
A new MOS image sensor operating in a non-destructive readout mode
TL;DR: In this article, a charge modulation device (CMD) is presented for the first time, which is characterized by a non-destructive readout operation and an amplification at each pixel level.
Proceedings ArticleDOI
A line-address CCD image sensor
T. Yamada,K. Ikeda,N. Suzuki +2 more
TL;DR: In this article, a 1/2" format 570(H)×495(V) pixel line-address CCD image sensor was described, which achieved a 38% fill factor with interlined multiphase vertical CCD registers.