A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon

TLDR: The relationship between the Hall mobility and the hole concentration in p-type silicon was experimentally investigated in this article, where Boron and gallium were used as dopants; their doping was done by either the ion implantation or the diffusion technique.

Abstract: The relationship between the Hall mobility and the hole concentration in p-type silicon were experimentally investigated. Boron and gallium were used as dopants; their doping was done by either the ion implantation or the diffusion technique. It was found that the relationships for boron-doped specimens and for gallium-doped specimens for the heavily doped range are considerably different from each other. Both of these relationships are also different from the so-called Irvin curve which is well known as a standard relationship between the mobility of carriers and the impurity concentration, but the relationship for boron doping is almost consistent with that of Thurber et al., if the Hall mobility factor is reasonably taken into account.