Proceedings ArticleDOI
A New Load-Pull Characterization Method for Microwave Power Transistors
Y. Takayama
- pp 218-220
TLDR
In this paper, a novel method for microwave power transistor load-pull characterization is presented, where both input and output ports of a test transistor are simultaneously driven by external signals at the same specified frequency.Abstract:
A novel method for microwave power transistor load-pull characterization is presented. The method provides an equivalent load-pull measurement technique without using an output impedance tuner. In this method, both input and output ports of a test transistor are simultaneously driven by external signals at the same specified frequency. Results of its application to a medium-power GaAs FET are given.read more
Citations
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Journal ArticleDOI
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
W.R. Curtice,M. Ettenberg +1 more
TL;DR: In this article, a nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data.
Book
High Efficiency RF and Microwave Solid State Power Amplifiers
TL;DR: In this paper, the authors present an overview of power amplifiers and their application in the context of load-pulling and power-combiner networks, as well as their properties.
Journal ArticleDOI
High-power time-domain measurement system with active harmonic load-pull for high-efficiency base-station amplifier design
TL;DR: In this article, a measurement system combining vector corrected waveform measurements with active harmonic load-pull extends real-time experimental waveform engineering up to the 30-W power level, where the vector correction procedure is presented.
Journal ArticleDOI
GaAs FET large-signal model and its application to circuit designs
Y. Tajima,B. Wrona,K. Mishima +2 more
TL;DR: In this article, a large-signal GaAs FET model is derived based on dc characteristics of the device and analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design.
Journal ArticleDOI
Practical waveform engineering
TL;DR: RF I-V waveform measurement and engineering systems are now finally enabling practical waveform engineering to be directly undertaken with systems capable of supporting continuous wave stimulus reaching a high level of maturity.
References
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Journal ArticleDOI
Automatic Load Contour Mapping for Microwave Power Transistors
TL;DR: In this article, a large signal characterization of microwave power transistors is described, where a computer controlled apparatus is used to map contours of constant output power and efficiency, on a Smith Chart, for dynamic matching of both input and output circuits.
Proceedings ArticleDOI
Large-Signal S-Parameter Characterization of UHF Power Transistors
R.J. Chaffin,W.H. Leighton +1 more
TL;DR: In this article, the problems involved in the measurement and application of large-signal S-parameters for UHF power transistors are discussed, and experimental results obtained using a specially designed high-power Sparameter test set are reported.
Journal ArticleDOI
Hybrid Integrated 10-Watt CW Broad-Band Power Source at S Band
TL;DR: An S-band CW power source consisting of transistor-amplifier-driven varactor-doubler chains fabricated in hybrid integrated form is described, which has good heat sinking and low parasitic reactance and which permits direct paralleling of transistors.
Proceedings ArticleDOI
1-2 GHz high-power linear transistor amplifier
A. Presser,E. Belohoubek +1 more
TL;DR: In this article, the development of an octave bandwidth, linear 1O-W amplifier using MIC techniques is described, which consists of three hybrid-coupled balanced stages using ballasted transistors in special microstrip carriers.