Journal ArticleDOI
A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction
M.J. Deen,Z.X. Yan +1 more
TLDR
In this paper, a new method for measuring the threshold voltage of small geometry MOS devices is presented, based on the drain current equation in the sub-threshold region, defined as the gate voltage required for a surface band-bending of 2 φ F, can be accurately determined experimentally by the Quasi-Constant Current (QCC) method.Abstract:
A new method for measuring the threshold voltage of small geometry MOS devices is presented. Based on the drain current equation in the subthreshold region, the threshold voltage ( V TH ), defined as the gate voltage required for a surface band-bending of 2 φ F , can be accurately determined experimentally by the Quasi-Constant-Current (QCC) method. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in subthreshold region, extracting the V TH with a unique value, and being suitable for small geometry devices over a wide range of voltage biases, temperatures, and process parameter variations. It can be used either for circuit simulation like the MOS3 model in SPICE, or as a routine monitor of processing like channel doping profile, gate oxide thickness or source and drain junction depths.read more
Citations
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Journal ArticleDOI
High frequency noise of MOSFETs I Modeling
Chih-Hung Chen,M.J. Deen +1 more
TL;DR: In this article, a model is proposed which can predict accurately both ac and noise performance (all four noise parameters: minimum noise figure NF min, equivalent noise resistance R n, optimized source resistance R opt and reactance X opt ) of MOSFETs based on s -parameter and noise measurements at microwave frequencies.
Journal ArticleDOI
An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation
Xiaosong Li,L.K.J. Vandamme +1 more
TL;DR: In this paper, the effect of the series resistance on the internal drain-source voltage and the channel current IDS was investigated in an LDD MOSFET and it was shown that the role of RDd becomes more important as the value of V DS /V G ∗ increases.
Journal ArticleDOI
An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
TL;DR: The generalized adjusted constant current (CC) method as discussed by the authors is based on the theory of the charge-based MOS transistor model, and it introduces an adjusted current criterion, depending on VDS, allowing to coherently determine VTH for the entire range of VDS from linear operation to saturation.
Journal ArticleDOI
Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET
TL;DR: In this paper, a new method is proposed to use an L-array for extracting the low field mobility μ00, the mobility degradation coefficient θ, the channel length correction l′, and the parameters Rs0 and Rsv for the gate-voltage-dependent series resistance on the source side RsS = Rs0 + Rsv/VG∗.
Journal ArticleDOI
Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors
TL;DR: In this paper, a method to extract the intrinsic channel mobility from the measured extrinsic mobility over a broad range of gate voltage is presented, and the results show that the intrinsic mobility in the channel is gate voltage dependent and increases almost linearly with voltages at biases above the threshold voltage.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
Ion-implanted complementary MOS transistors in low-voltage circuits
R.M. Swanson,James D. Meindl +1 more
TL;DR: In this paper, simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on, and these equations are used to find the transfer characteristics of complementary MOS inverters.
Journal ArticleDOI
Very small MOSFET's for low-temperature operation
TL;DR: In this article, the improvements in the device characteristics of n-channel MOSFET's that occur at low temperatures are considered. Butler et al. presented a device design for an enhancement mode FET with a channel length of I µm that is suitable for operation at liquid nitrogen temperature.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.