Journal ArticleDOI
A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates
Zhi Lin,Xingbi Chen +1 more
TLDR
In this article, a new solution based on the concept of a deep drain diffusion combined with field plates (FPs) is proposed for the superjunction lateral double diffused MOSFET (SJ-LDMOS) device.Abstract:
A new solution based on the concept of a deep drain diffusion combined with field plates (FPs) is proposed for the superjunction lateral double diffused MOSFET (SJ-LDMOS) device. The deep drain diffusion suppresses the curvature effect of the conventional SJ-LDMOS and the FPs optimize the electric field distribution further. Simulated results show that the proposed SJ-LDMOS exhibits figure of merits of 12.8 and 8.5 MW/cm $^{\mathrm{{2}}}$ for 700 and 1200 V ratings, respectively, which are about 20% better than the prior art. Moreover, the proposed SJ-LDMOS is less sensitive to the charge imbalance. Using the isotropic etch technique followed by implantation, the deep drain diffusion is easy to be fabricated.read more
Citations
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Power Semiconductor Devices
Jerry Hudgins,Rik W. De Doncker +1 more
TL;DR: In this paper, the authors proposed a matrix of on-off switches to convert power from ac-to-dc (rectifier), dc-todc (chopper), dc to ac (inverter), and ac to ac at the same (ac controller) or different frequencies (cycloconverter).
Journal ArticleDOI
Novel LDMOS Optimizing Lateral and Vertical Electric Field to Improve Breakdown Voltage by Multi-Ring Technology
TL;DR: In this article, a lateral double-diffused MOSFET with multi-ring substrate (M-R LDMOS) was proposed to enhance the breakdown voltage by introducing new high electric field peaks by the M-R due to the effect of the electric field modulation.
Journal ArticleDOI
Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance
TL;DR: In this article, the authors proposed an optimization methodology of the minimum specific ON-resistance for the lateral superjunction device based on the concepts of charge and potential electric fields.
Journal ArticleDOI
Novel Superjunction LDMOS With a High- K Dielectric Trench by TCAD Simulation Study
TL;DR: In this article, a superjunction lateral double-diffused MOSFET with a deep High-K (HK) dielectric trench (HK SJ-LDMOS) is proposed and its mechanism is investigated by Technology Computer Aided Design (TCAD) simulations.
Proceedings ArticleDOI
Novel LDMOS with assisted deplete-substrate layer consist of super junction under the drain
TL;DR: In this article, the authors proposed a lateral double-diffused MOSFET with the assisted deplete-substrate layer (ADSL) under the drain electrode for the first time.
References
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Power Semiconductor Devices
Jerry Hudgins,Rik W. De Doncker +1 more
TL;DR: In this paper, the authors proposed a matrix of on-off switches to convert power from ac-to-dc (rectifier), dc-todc (chopper), dc to ac (inverter), and ac to ac at the same (ac controller) or different frequencies (cycloconverter).
Journal ArticleDOI
Sj/resurf ldmost
TL;DR: In this paper, a monolithic lateral double diffused MOSFET based on the super junction (SJ) concept is proposed to significantly improve the device's on-state and off-state characteristics.
Journal ArticleDOI
Super-junction LDMOST on a silicon-on-sapphire substrate
S.G. Nassif-Khalil,C.A.T. Salama +1 more
TL;DR: In this article, a super-junction lateral double diffused MOST (SJ-LDMOST) in silicon-on-sapphire technology targeting power integrated circuits (PICs) is proposed, implemented and characterized.
Proceedings ArticleDOI
Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI
TL;DR: In this paper, the authors examined the possibility of the Super Junction (SJ) concept to realize lateral device structures on SOI with high breakdown voltage and low on-resistance for use in power integrated circuits (PICs).