Journal ArticleDOI
AlN/GaN superlattices grown by gas source molecular beam epitaxy
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TLDR
In this paper, a modified gas source molecular beam epitaxy (MBE) technique was used to grow a superlattice with layer thickness between 0.5 and 20 nm.About:
This article is published in Thin Solid Films.The article was published on 1991-05-15. It has received 43 citations till now. The article focuses on the topics: Molecular beam epitaxy & Cathodoluminescence.read more
Citations
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Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Group III nitride semiconductors for short wavelength light-emitting devices
J.W. Orton,C. T. Foxon +1 more
TL;DR: In this article, the authors provide a detailed review of the state-of-the-art properties of the group III nitrides (AlN, GaN and InN).
Journal ArticleDOI
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN.
TL;DR: Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory and it is found that relative alignments are less sensitive to the choice of XC functional.
Journal ArticleDOI
Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
G. Martin,S. Strite,A. Botchkarev,Anant K. Agarwal,Angus Rockett,Hadis Morkoç,Walter R. L. Lambrecht,Benjamin Segall +7 more
TL;DR: In this article, the core level binding energies with respect to the valence-band maximum in both GaN and AlN bulk films were measured by x-ray photoemission spectroscopy.
Journal ArticleDOI
Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition
TL;DR: In this article, the growth of thin carbon nitride films on Si(100) substrates at temperatures in the range of 100-700°C using electron-beam evaporation of graphite assisted with electron cyclotron resonance (ECR) plasma generated nitrogen species.
References
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Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Book
Introductory quantum mechanics
TL;DR: In this article, the authors present a review of concepts of classical quantum mechanics, including operators, eigenfunctions, and eigenvalues, and apply them to problems in three dimensions.
Journal ArticleDOI
The preparation of cross‐section specimens for transmission electron microscopy
John C. Bravman,Robert Sinclair +1 more
TL;DR: In this paper, a technique for fabricating TEM specimens that can be viewed in cross-section is described, which can be readily adapted to the study of other systems, including silicon-based materials.
Journal ArticleDOI
Quantum-well heterostructure lasers
TL;DR: In this paper, the steplike density-of-states of a quantum-well heterostructure can improve the operation of a semiconductor laser, which is explained in terms of the step-like density of states and the disturbed electron and phonon distributions in the quantumwell active regions.
Journal ArticleDOI
Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
TL;DR: In this article, it was shown that by modifying the layer structures of the conventional multiquantum well (MQW) lasers, extremely low Jth of 250 A/cm2 (averaged value) for broad-area Fabry-Perot diodes of 200×380 μm was obtained.
Related Papers (5)
Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
J. R. Waldrop,R. W. Grant +1 more