Anomalous lattice vibrations of single- and few-layer MoS2.
TLDR
This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.Abstract:
Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S−Mo−S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.read more
Citations
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
Jonathan N. Coleman,Mustafa Lotya,Arlene O’Neill,Shane D. Bergin,Shane D. Bergin,Paul J. King,Umar Khan,Karen Young,Anne Gaucher,Sukanta De,Ronan J. Smith,Igor V. Shvets,Sunil K. Arora,George Stanton,Hye-Young Kim,Hye-Young Kim,Kangho Lee,Kangho Lee,Gyu Tae Kim,Georg S. Duesberg,Toby Hallam,John J. Boland,Jing Jing Wang,John F. Donegan,Jaime C. Grunlan,Gregory P. Moriarty,Aleksey Shmeliov,Rebecca J. Nicholls,J M Perkins,Eleanor M. Grieveson,Koenraad Theuwissen,David W. McComb,Peter D. Nellist,Valeria Nicolosi +33 more
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Raman spectroscopy as a versatile tool for studying the properties of graphene
Andrea C. Ferrari,Denis M. Basko +1 more
TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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