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Application of flash lamp annealing on nitrogen-doped amorphous indium-gallium-zinc-oxide thin film transistors
Yoonsuk Kim,Jin-Soo Kim,Byung-Kuk Kim,Hyoung June Kim,Seok Kim,Eunsoo Choi,Jin-Ha Hwang,Seungho Park +7 more
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This article is published in ECS Journal of Solid State Science and Technology.The article was published on 2017-01-01. It has received 1 citations till now. The article focuses on the topics: Thin-film transistor & Annealing (metallurgy).read more
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A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application
TL;DR: In this paper , the authors summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications, and the sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector.
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
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ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
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3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array
Jae Kyeong Jeong,Jong Han Jeong,Jong Hyun Choi,Jang Soon Im,Sung Ho Kim,Hui Won Yang,Ki Nyeng Kang,Kwang Suk Kim,Tae Kyung Ahn,Hyun-Joong Chung,Min-Kyu Kim,Bon Seog Gu,Jin-Seong Park,Yeon-Gon Mo,Hye-Dong Kim,Ho Kyoon Chung +15 more
TL;DR: In this paper, a 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an activematrix back plane.