Journal ArticleDOI
Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array
Hongpo Hu,Bin Tang,Hui Wan,Haiding Sun,Shengjun Zhou,Jiangnan Dai,Changqing Chen,Sheng Liu,L. Jay Guo +8 more
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TLDR
In this paper, high crystalline quality InGaN/AlGaN multiple quantum structures on patterned sapphire with silica array (PSSA) have been successfully demonstrated.About:
This article is published in Nano Energy.The article was published on 2020-03-01. It has received 135 citations till now. The article focuses on the topics: Quantum efficiency & Sapphire.read more
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Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
TL;DR: In this paper, the authors review the recent progress in the development of UV optoelectronics based on AlGaN-SiC platform, mainly focusing on: (1) the growth strategies and material characterizations of alGaN epilayers on SiC; (2) the fabrication and performance evaluation of UV Optoelectronic devices built on the platform, including UV LEDs/lasers and UV photodetectors.
Journal ArticleDOI
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
TL;DR: In this article, a three-layer staggered quantum well (QW) was used to improve the energy efficiency of InGaN-based yellow light-emitting diodes (LEDs) with high brightness.
Journal ArticleDOI
Perspectives on UVC LED: Its Progress and Application
Tsung Chi Hsu,Yu Tsai Teng,Yen Wei Yeh,Xiaotong Fan,Kuo Hsiung Chu,Su Hui Lin,Kuo Kuang Yeh,Po-Tsung Lee,Yue Lin,Zhong Chen,Tingzhu Wu,Hao-Chung Kuo +11 more
TL;DR: In this paper, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer, which can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability.
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Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification
Bin Tang,Hongpo Hu,Hui Wan,Jie Zhao,Liyan Gong,Yu Lei,Qiang Zhao,Shengjun Zhou,Shengjun Zhou +8 more
TL;DR: In this paper, the authors demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by introducing voids during growth, which significantly facilitated the underlying dislocations as demonstrated by the transmission electron microscopy (TEM) image.
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Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall
Meng Tian,Huabin Yu,Muhammad Hunain Memon,Zhanyong Xing,Chen Huang,Hongfeng Jia,Haochen Zhang,Danhao Wang,Shi Fang,Haiding Sun +9 more
TL;DR: In this paper, the authors performed a comprehensive investigation on the optical characterization of micro-sized DUV LEDs (micro-LEDs) emitting below 280 nm, highlighting the light extraction behavior in relation to the chip sidewall angle.
References
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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
TL;DR: In this article, the authors reviewed recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices and described the key obstacles to enhancing their efficiency and how to improve their performance.
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Advances in group III-nitride-based deep UV light-emitting diode technology
Michael Kneissl,Michael Kneissl,Tim Kolbe,Christopher L. Chua,V. Kueller,N. Lobo,Joachim Stellmach,Arne Knauer,Hernan Rodriguez,Sven Einfeldt,Z. Yang,N M Johnson,Markus Weyers +12 more
TL;DR: The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications.
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AlGaN photonics: recent advances in materials and ultraviolet devices
TL;DR: In this article, a review of the progress in AlGaN-based UV LEDs, EB-pumped light sources, LDs, PDs, passive devices, and nonlinear optical properties are presented.
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Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
TL;DR: In this article, a transparent AlGaN:Mg contact layer, a Rh mirror electrode, an AlN template on a patterned sapphire substrate, and encapsulation resin were introduced to improve the light extraction.
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Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
TL;DR: In this paper, the mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001) sapphire and exhibiting different grain diameters was studied using high-resolution x-ray diffraction.