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Journal ArticleDOI

Carbon-based electronics.

Phaedon Avouris, +2 more
- 30 Sep 2007 - 
- Vol. 2, Iss: 10, pp 605-615
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TLDR
This work reviews the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons and suggests that it could be possible to make both electronic and optoelectronic devices from the same material.
Abstract
The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

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Reference EntryDOI

Carbon-Based Interconnects for RF Nanoelectronics

TL;DR: In this paper, circuit-oriented modeling techniques for both carbon nanotube (CNT) and graphene nanoribbon (GNR) interconnects are introduced based on their circuit models.
Journal ArticleDOI

A promising photoelectrochemical sensor based on a ZnO particle decorated N-doped reduced graphene oxide modified electrode for simultaneous determination of catechol and hydroquinone

TL;DR: In this paper, a two-step synthesis of a nitrogen-doped reduced graphene oxide-ZnO (N-Doped Reduced Gated Gated ZnO) nanocomposite and its photo electrochemical application is described.
Journal ArticleDOI

A computational study on electrical characteristics of a novel band-to-band tunneling graphene nanoribbon FET

TL;DR: In this paper, a modified structure was proposed for the band-to-band tunneling field effect transistor (BTBT-FET) mainly to suppress the ambipolar current with the assumption that the ON state characteristics, especially sub-threshold swing, must not be degraded.
Journal ArticleDOI

Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping.

Jingyi Wang, +1 more
- 13 Jul 2020 - 
TL;DR: The aim of this review is to provide polymer chemist a basic concept of polymer based SWNT separation, as well as some polymer design strategies, influential factors and potential applications.
Journal ArticleDOI

Electrochemical studies on liquid properties in extended nanospaces using mercury microelectrodes.

TL;DR: The developed nanofluidic chip becomes a new experimental tool for demonstrating confinement‐induced nanospatial electrochemical properties of liquids.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
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