Journal ArticleDOI
Carbon-based electronics.
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TLDR
This work reviews the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons and suggests that it could be possible to make both electronic and optoelectronic devices from the same material.Abstract:
The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.read more
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Journal ArticleDOI
A graphene-based broadband optical modulator
Ming Liu,Xiaobo Yin,Erick Ulin-Avila,Baisong Geng,Thomas Zentgraf,Long Ju,Feng Wang,Feng Wang,Xiang Zhang,Xiang Zhang +9 more
TL;DR: Graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
Journal ArticleDOI
Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications
TL;DR: In this paper, a review of nitrogen-doped graphene is presented, including various synthesis methods to introduce N doping and various characterization techniques for the examination of various N bonding configurations.
Journal ArticleDOI
Electronic transport in two-dimensional graphene
TL;DR: In this paper, a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures is provided.
References
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Journal ArticleDOI
Photoelectronic transport imaging of individual semiconducting carbon nanotubes
Kannan Balasubramanian,Yuwei Fan,Marko Burghard,Klaus Kern,Marcel Friedrich,Uli Wannek,Alf Mews +6 more
TL;DR: In this paper, the photoresponse as a function of position along single wall carbon nanotubes has been investigated using a confocal scanning optical microscope, and the magnitude of the photocurrent was found to increase linearly with the laser intensity, and to be maximum for parallel orientation between the light polarization and tube axis.
Journal ArticleDOI
Sub 20 nm Short Channel Carbon Nanotube Transistors
Robert Seidel,Andrew Graham,Johannes Kretz,B. Rajasekharan,Georg S. Duesberg,Maik Liebau,Eugen Unger,Franz Kreupl,W. Hoenlein +8 more
TL;DR: Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated and display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.
Journal ArticleDOI
Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.
TL;DR: The importance of scattering for a stepwise change of current as a function of gate voltage and the implications of these observations for the performance of nanotube transistors are explained.
Journal ArticleDOI
Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes.
Yung Fu Chen,Michael S. Fuhrer +1 more
TL;DR: Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts with nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 microA, the reported current limit in metallic SWNTs due to optical phonon emission.
Journal ArticleDOI
Minimal conductivity in bilayer graphene
TL;DR: In this article, it was shown that minimal conductivity of order e2/h found experimentally in bilayer graphene is an intrinsic property and that the conductivity is equal to e 2/2h per valley per spin.