Journal ArticleDOI
Characteristics of pentacene-based thin-film transistors
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TLDR
In this paper, the authors used pentacene as an active layer of organic thin-film transistors (TFTs) by depositing with the vacuum thermal evaporation.About:
This article is published in Materials Science and Engineering: C.The article was published on 2004-01-05. It has received 31 citations till now. The article focuses on the topics: Pentacene & Organic semiconductor.read more
Citations
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Journal ArticleDOI
High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.
TL;DR: A comparison study of high-k Dielectric Materials for OFETs using self-Assembled Monoand Multilayers and Inorganic-Organic Bilayers to study the properties of polymeric-Nanoparticle Composites.
Journal ArticleDOI
Photo precursor for pentacene
Hidemitsu Uno,Yuko Yamashita,Makoto Kikuchi,Hikaru Watanabe,Hiroko Yamada,Tetsuo Okujima,Takuji Ogawa,Noboru Ono +7 more
TL;DR: 6,13-Dihydro-6, 13-ethanopentacene-15,16-dione gave pentacene efficiently both in solid and in solution by irradiation of light as mentioned in this paper.
Journal ArticleDOI
Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility
TL;DR: In this article, the authors showed that the continuities of the pentacene thin films vary with the deposition conditions of the polysilicon molecules, and that a smaller number of voids is observed at the interface for the two-step deposition, which results in field-effect mobilities as high as 1.2 cm 2 V -1 s -1 ; these are higher by more than a factor of two than those of the Pentacene films deposited in one step.
Journal ArticleDOI
Enhanced environmental stability induced by effective polarization of a polar dielectric layer in a trilayer dielectric system of organic field-effect transistors: a quantitative study.
TL;DR: A model has been proposed based on the polarization of hydroxyl groups to explain the enhanced stability in these devices and it is believed that this general method using a trilayer dielectric system can be extended to fabricate other OFETs with materials that are known to show high performances under vacuum but degrade under ambient conditions.
Journal ArticleDOI
Ultrathin organic transistors on oxide surfaces
Maren Daraktchiev,Adrian von Mühlenen,Frank Nüesch,Michel Schaer,Martin Brinkmann,M. N. Bussac,Libero Zuppiroli +6 more
TL;DR: In this paper, a model of an organic field-effect transistor (OFET) composed of a single layer of pentacene crystal in interaction with an oxide surface is presented, where the free and trapped carriers at the oxide interface determine the OFET characteristics and performance.
References
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Journal ArticleDOI
Stacked pentacene layer organic thin-film transistors with improved characteristics
TL;DR: In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.
Book
Semiconductor physics and devices
TL;DR: Neamen's Semiconductor Physics and Devices, Third Edition as discussed by the authors deals with the electrical properties and characteristics of semiconductor materials and devices, and brings together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.
Journal ArticleDOI
Temperature-independent transport in high-mobility pentacene transistors
TL;DR: In this article, the authors explored the charge-carrier transport mechanism in the organic semiconductor pentacene using thin-film transistor structures and found that the variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior.
Journal ArticleDOI
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
TL;DR: In this paper, a method was developed to extract the carrier mobility from an analysis of the transfer characteristics of polycrystalline sexithiophene (6 T) transistors at temperatures ranging from 10 to 300 K.