Journal ArticleDOI
Characterization of high open-circuit voltage double sided buried contact (DSBC) silicon solar cells
TLDR
In this paper, double-sided buried contact (DSBC) silicon solar cells have consistently shown high open-circuit voltages (Voc) than its single sided buried contact counterpart because of better rear surface passivation.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 1997-02-15. It has received 4 citations till now.read more
Citations
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Journal ArticleDOI
Bifacial solar photovoltaics – A technology review
TL;DR: In this paper, the state-of-the-art bifacial solar PV technology is described based on a comprehensive examination of nearly 400 papers published since 1979 (approximately 40% are referenced in this work) focused on illuminating additional research and development opportunities to enhance and assess performance and expand Bifacial technology's overall contribution within a rapidly expanding global solar market.
Journal ArticleDOI
Rapid thermal processing of cost‐effective contacts for silicon solar cells
Journal ArticleDOI
Loss analysis of DSBC solar cells on FZ(B), MCZ(B), CZ(Ga), and CZ(B) wafers
TL;DR: In this article, the performance limitations of the double-sided buried contact (DSBC) solar cell were investigated on boron-doped float-zoned, magnetically confined Czochralski (CZ) wafers in terms of manufacturing limitations, design limitations, and wafer choice limitations.
Journal ArticleDOI
Improving photoresponse characterization of dye-sensitized solar cells: Application to the laser beam-induced current technique
Javier Navas,Rodrigo Alcántara,Concha Fernández-Lorenzo,Juan A. Anta,Elena Guillén,Joaquín Martín-Calleja +5 more
TL;DR: In this article, the photocurrent response of dye-sensitized solar cells (DSSCs) to light excitation from focused and non-focused laser beams is investigated, and a mathematical algorithm has been devised to describe the rise and decay processes.
References
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Semiconductor Devices: Physics and Technology
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface
TL;DR: In this article, the experimentally observed dependence of effective surface recombination velocity Seff at the Si-SiO2 interface on light-induced minority carrier excess concentration is compared with theoretical predictions of an extended Shockley-Read-Hall (SRH) formalism.