Journal ArticleDOI
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
Yao Guo,Xianlong Wei,Jiapei Shu,Bo Liu,Jianbo Yin,Changrong Guan,Yuxiang Han,Song Gao,Qing Chen +8 more
TLDR
In this paper, the impact of the trapped charges on the carrier transport of MoS2-based metal-oxide-semiconductor FETs is evaluated. And the trapped charge density and time constant at different temperatures are extracted.Abstract:
The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2-MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4 V to −45 V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.read more
Citations
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Recent Advances in Ultrathin Two-Dimensional Nanomaterials
Chaoliang Tan,Xiehong Cao,Xiehong Cao,Xue-Jun Wu,Qiyuan He,Jian Yang,Xiao Zhang,Junze Chen,Wei Zhao,Shikui Han,Gwang-Hyeon Nam,Melinda Sindoro,Hua Zhang +12 more
TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Journal ArticleDOI
Hybrid nanostructures of metal/two-dimensional nanomaterials for plasmon-enhanced applications
TL;DR: In this review, the developments in the field of metal/2D hybrid nanostructures are comprehensively described and several plasmonic electrical effects including an improved photogeneration rate, efficient carrier transfer, and a plAsmon-induced "hot carrier", playing a significant role in enhancing device performance are described.
Journal ArticleDOI
MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection
TL;DR: The resulting Au/MoS2/Au optoelectronic gas sensor showed a significant enhancement of the device sensitivity S toward ppb level of NO2 gas exposure reaching S = 4.9%/ppb (4900% /ppm), where S is a slope of dependence of relative change of the sensor resistance on NO2 concentration.
Journal ArticleDOI
Insulators for 2D nanoelectronics: the gap to bridge.
Yury Yu. Illarionov,Theresia Knobloch,M. Jech,Mario Lanza,Deji Akinwande,Mikhail I. Vexler,Thomas Mueller,Max C. Lemme,Gianluca Fiori,Frank Schwierz,Tibor Grasser +10 more
TL;DR: The authors review the current state-of-the-art and the future prospects of suitable insulators for 2D technologies and possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.
Journal ArticleDOI
Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2.
TL;DR: Memristive devices based on monolayer n-MoS2 on p-Si substrate with a large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated and demonstrate the potential applications of ultrathin transition metal dichalcogenides for memristive synapses.
References
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Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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Ultrasensitive photodetectors based on monolayer MoS2.
TL;DR: Ultraensitive monolayer MoS2 phototransistors with improved device mobility and ON current are demonstrated, showing important potential for applications in MoS 2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.