Proceedings ArticleDOI
Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
Sachin Madhusoodhanan,Kamalesh Hatua,Subhashish Bhattacharya,Scott Leslie,Sei-Hyung Ryu,Mrinal K. Das,Anant K. Agarwal,David Grider +7 more
- pp 310-317
Reads0
Chats0
TLDR
In this paper, a three-level neutral point clamped voltage source converter (3L-NPC VSC) was used as a 7.2kV grid interface for the solid state transformer and STATCOM operation.Abstract:
Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.read more
Citations
More filters
Short-Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module
Ke Wang,Yizhou Cong,Pengyu Fu,Xiao Yu Li,Qian Cheng,Boxue Hu,Jing Wang,Ashish Kumar,K.J. Olejniczak,Daniel Pelletier,Zach Cole,Amol Deshpande,Amit Goyal +12 more
TL;DR: In this paper , the initial evaluation of a 3.3-kV SiC MOSFET power module (not fully populated) from Wolfspeed, including static, short circuit (SC), and partial discharge (PD) test results is presented.
References
More filters
BookDOI
Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Journal ArticleDOI
The active NPC converter and its loss-balancing control
T. Bruckner,S. Bernet,H. Guldner +2 more
TL;DR: A loss-balancing scheme is introduced, enabling a substantially increased output power and an improved performance at zero speed, compared to the conventional NPC VSC.
Journal ArticleDOI
Recent developments of high power converters for industry and traction applications
TL;DR: In this article, the state-of-the-art of power semiconductors for high power PWM converters is summarized. And the design and characteristics of a commercially available integrated gate commutated thyristors (IGCT) neutral point clamped PWM voltage source converter for medium voltage drives are discussed.
Book
Silicon carbide : recent major advances
TL;DR: In this paper, the authors present a simulation of low-defect 3D-SiC grown on Undulant-Si (001) substrates. But the simulation is limited to 2D and 3D SiC.
Journal ArticleDOI
Characterization, Modeling, and Application of 10-kV SiC MOSFET
TL;DR: In this article, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated.