Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
Arun Kadavelugu,Subhashish Bhattacharya,Sei-Hyung Ryu,Edward Van Brunt,David Grider,Anant K. Agarwal,Scott Leslie +6 more
- pp 2528-2535
TLDR
In this article, the performance of the 15 kV n-IGBT has been evaluated up to 11 kV. This is the highest switching characterization voltage ever reported on a single power semiconductor device.Abstract:
The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage power conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal for the smart grid power conversion systems and medium voltage drives. The need for complex multi-level topologies or series connected devices can be eliminated, while achieving reduced power loss, by using the SiC IGBT. In this paper, characteristics of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest switching characterization voltage ever reported on a single power semiconductor device. The paper includes static characteristics up to 25 A (forward) and 12 kV (blocking). The dependency of the power loss with voltage, current and temperature are provided. In addition, the basic converter design considerations using this ultrahigh voltage IGBT for high power conversion applications are presented. Also, a comparative evaluation is reported with an IGBT with thicker field-stop buffer layer as a means to show flexibility in choosing the IGBT design parameters based on the power converter frequency and power rating specification. Finally, power loss comparison of the IGBTs and MOSFET is provided to consummate the results for a complete reference.read more
Citations
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Journal ArticleDOI
Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
Sachin Madhusoodhanan,Awneesh Tripathi,Dhaval Patel,Krishna Mainali,Arun Kadavelugu,Samir Hazra,Subhashish Bhattacharya,Kamalesh Hatua +7 more
TL;DR: In this article, a transformerless intelligent power substation (TIPS) is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid.
Journal ArticleDOI
A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET
TL;DR: In this paper, a 15kV silicon carbide (SiC) MOSFET gate drive is presented, which features high commonmode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions.
Journal ArticleDOI
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
Krishna Mainali,Awneesh Tripathi,Sachin Madhusoodhanan,Arun Kadavelugu,Dhaval Patel,Samir Hazra,Kamalesh Hatua,Subhashish Bhattacharya +7 more
TL;DR: The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/stepdown functionality of a transformer as mentioned in this paper.
Journal ArticleDOI
Next generation electric drives for HEV/EV propulsion systems: Technology, trends and challenges
TL;DR: In this paper, a comprehensive review of the current technologies, future trends and enabling technologies that will make possible next generation hybrid and full electric vehicle (HEV/EV) drive systems is presented.
Journal ArticleDOI
Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter
Samir Hazra,Sachin Madhusoodhanan,Giti Karimi Moghaddam,Kamalesh Hatua,Subhashish Bhattacharya +4 more
TL;DR: In this paper, a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs is presented, which is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and corresponding experimental results are presented.
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