Journal ArticleDOI
Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution
TLDR
In this paper, the optical transitions and absorption spectra of InAs/GaAs quantum dots are computed for short quantum wires with a square base and the variation of the height is Gaussian.Abstract:
InAs/GaAs quantum dots (QDs) grown by various methods do not have the same dimensions in the three axes. This paper reports on expressions for computations of the optical transitions and absorption spectra of InAs/GaAs QDs that have a square base and the variation of the height is Gaussian. The dots were considered to be elongated quantum boxes with square bases having finite potentials at the boundaries. The results are in excellent agreement with reported experimental data of photoluminescence and absorption. The expressions could be successfully applied to short quantum wires.read more
Citations
More filters
Journal ArticleDOI
Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot
Sanjib Kabi,A. G. Unil Perera +1 more
TL;DR: In this article, the intersublevel absorption peak energy and absorption coefficient of non-uniform quantum dot ensembles are calculated analytically and the effect of size variations and size distribution of QDs on their energy states is analyzed.
Journal ArticleDOI
Algebraic approximations for transcendental equations with applications in nanophysics
TL;DR: Using algebraic approximations of trigonometric or hyperbolic functions, a class of transcendental equations can be transformed in tractable, algebraic equations as discussed by the authors, which preserves the functional dependence on the physical parameters of the problem.
Journal ArticleDOI
Efficiency of quantum dot solar cell enhanced by improving quantum dots performance
H. L. Weng,H. Y. Ueng,C. P. Lee +2 more
TL;DR: In this article, the authors proposed an innovative description to provide a quantitative basis to enhance the conversion efficiency of InAs/GaAs quantum dot solar cells (QDSC) using a theoretical approach and numerical simulation.
Journal ArticleDOI
Understanding quantum phenomena without solving the Schrödinger equation: the case of the finite square well
TL;DR: In this paper, an approximate formula for the energy levels of the bound states of a particle in a finite square well is obtained, without using the Schrodinger equation, and the physics and mathematics involved in this approach are accessible to a gifted high school student.
Proceedings ArticleDOI
On the optical absorption spectra of as-grown III–V quantum dot systems
TL;DR: In this paper, the authors have modeled the absorption spectra of as-grown InxGa1-xAs/GaAs QD systems with growth interruption technique, and emphasized on the Gaussian size distribution of dots for analyzing the interband absorption spectrum of QD system.
References
More filters
Book
Quantum dot heterostructures
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
Journal ArticleDOI
Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs.
TL;DR: Through the reduction of the number of emitting dots in small mesa structures, it is shown narrow lines in the spectra, each associated with a single InAs dot, indicate short capture and relaxation times into the dots.
Journal ArticleDOI
Critical layer thickness for self-assembled InAs islands on GaAs.
TL;DR: In this paper, the authors used atomic force microscopy (AFM) to directly observe the progression of surface morphology of InAs deposited by molecular-beam epitaxy on GaAs(100).
Journal ArticleDOI
Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
TL;DR: In this paper, the authors show that the first quantum dots formed are in the quantum size range (height 30 A, half-base 120 A), that the dispersion on their sizes is remarkably low (±10%), and that they are located fairly regularly (interdot distance 600 A).
Journal ArticleDOI
Ultranarrow Luminescence Lines from Single Quantum Dots.
Marius Grundmann,Jürgen Christen,N. N. Ledentsov,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,U. Richter,Ulrich Gösele,J. Heydenreich,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov +14 more
TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.
Related Papers (5)
Effects of a Gaussian size distribution on the absorption spectra of III-V semiconductor quantum dots
Subindu Kumar,Dipankar Biswas +1 more