Journal ArticleDOI
Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors
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TLDR
In this article, the leakage currents were majorly due to the conduction, which is space charge limited and was effective almost in the entire considered region of biasing (0 to −15 ǫV).Abstract:
MOS capacitors with HfO2 thin films as a high-κ gate-oxide layer were fabricated by RF sputtering for varied film thicknesses. These films were amorphous with thicknesses ranged from 35.9 to 87.9 nm. XPS confirmed the presence of SiOx interfacial layer. The HfO2 film of physical thickness 49.3 nm had shown a dielectric constant of 26.9 and an effective oxide thickness of 7.1 nm. However, the lowest leakage current was measured as 4.6 × 10−7 A/cm2 at −1 V in the MOS capacitor with a 35.9 nm thick HfO2 gate-oxide layer. The leakage currents were majorly due to the conduction, which is space charge limited and was effective almost in the entire considered region of biasing (0 to −15 V). Additionally, the emissions at different voltage regions are explained based on Poole-Frenkel (from 0 to −3 V), Schottky effect (−3 to −9 V), trap-assisted, and Fowler-Nordheim tunnelling (−9 to −15 V). Complete leakage current mechanisms are discussed.read more
Citations
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References
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Journal ArticleDOI
High dielectric constant oxides
TL;DR: In this article, the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects are discussed.
Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
Journal ArticleDOI
Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
Maciej Gutowski,John E. Jaffe,Chun-Li Liu,Matthew W. Stoker,Rama I. Hegde,Raghaw S. Rai,Philip J. Tobin +6 more
TL;DR: In this paper, theoretical and experimental results regarding the thermodynamic stability of high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2 were presented.
Journal ArticleDOI
On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode
Jan-Michael Schmalhorst,Daniel Ebke,Alexander Weddemann,Andreas Hütten,Andy Thomas,Günter Reiss,Andrey Turchanin,Armin Gölzhäuser,Benjamin Balke,Claudia Felser +9 more
Abstract: The transport properties of magnetic tunnel junctions with different (110)-textured Heusler alloy electrodes such as Co2MnSi, Co2FeSi or Co2Mn0.5Fe0.5Si, AlOx barrier, and Co–Fe counterelectrode are investigated. The bandstructure of Co2Mn1−xFexSi is predicted to show a systematic shift in the position of the Fermi energy EF through the gap in the minority density of states while the composition changes from Co2MnSi toward Co2FeSi. Although this shift is indirectly observed by x-ray photoemission spectroscopy, all junctions show a large spin polarization of around 70% at the Heusler alloy/Al–O interface and are characterized by a very similar temperature and bias voltage dependence of the tunnel magnetoresistance. This suggests that these transport properties of these junctions are dominated by inelastic excitations and not by the electronic bandstructure.
Journal ArticleDOI
1.5 nm direct-tunneling gate oxide Si MOSFET's
Hiroki Sasaki,Mizuki Ono,Takashi Yoshitomi,Tatsuya Ohguro,S. Nakamura,Masanobu Saito,Hiroshi Iwai +6 more
TL;DR: In this paper, a 1.5 nm direct-tunneling gate oxide was used to achieve a transconductance of more than 1,000 mS/mm at a gate length of 0.09 /spl mu/m at room temperature.