Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures

TLDR: In this article, the authors investigated the effect of rare earth (RE)-doped SiO2 layer on the luminescence properties of metal-oxide-semiconductor structures.

Abstract: Optical response of a rare earth (RE)-doped SiO2 layer is known to deteriorate markedly at room temperature due to RE clustering. The key challenge is therefore to probe the ongoing processes at the microscopic level and the subsequent impact on the luminescence properties with increasing RE concentration. Here, we report how the Er electroluminescence in a metal-oxide-semiconductor structure has been affected by increasing Er content. Our results indicate that the Er oxide clustering is anticipated by the formation of Si-based oxygen-deficiency centers during postimplantation annealing and leads to a strong quenching of the short-wavelength (350–500 nm) Er electroluminescence.