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Journal ArticleDOI

Cutting-edge terahertz technology

Masayoshi Tonouchi
- 01 Feb 2007 - 
- Vol. 1, Iss: 2, pp 97-105
TLDR
An overview of the status of the terahertz technology, its uses and its future prospects are presented in this article, with a focus on the use of the waveband in a wide range of applications.
Abstract
Research into terahertz technology is now receiving increasing attention around the world, and devices exploiting this waveband are set to become increasingly important in a very diverse range of applications. Here, an overview of the status of the technology, its uses and its future prospects are presented.

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Citations
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Journal ArticleDOI

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

TL;DR: The basic properties of graphene plasmons are reviewed: their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways, and emerging and potential applications.
Journal ArticleDOI

High-capacity millimetre-wave communications with orbital angular momentum multiplexing

TL;DR: This work demonstrates a 32-Gbit’s−1 millimetre-wave link over 2.5 metres with a spectral efficiency of ~16 bit s− 1 Hz−1 using four independent orbital–angular momentum beams on each of two polarizations, and shows an 8-Gbits−1 link containing two orbital angular momentum beams with crosstalk less than −12.5 dB.
Journal ArticleDOI

Review of terahertz and subterahertz wireless communications

TL;DR: The goal of this paper is to provide a comprehensive review of wireless sub-THz and THz communications and report on the reported advantages and challenges of using sub-terahertz andTHz waves as a means to transmit data wirelessly.
Journal ArticleDOI

Topological-insulator-based terahertz modulator

TL;DR: This work experimentally demonstrates an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators, and proposes that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states.
References
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PatentDOI

Quantum cascade laser

TL;DR: In this paper, the authors proposed a quantum cascade laser consisting of a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each AllnAs quantum barrier and strata with injection barriers interposed between two of the layers.
Journal ArticleDOI

Materials for terahertz science and technology

TL;DR: Terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules, as well as novel, higher-power terahertz sources.
Journal ArticleDOI

Terahertz semiconductor-heterostructure laser

TL;DR: A monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure is reported, which is very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Terahertz semiconductor heterostructure laser

TL;DR: In this article, a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure is presented.
Journal ArticleDOI

Non-destructive terahertz imaging of illicit drugs using spectral fingerprints.

TL;DR: A novel basic technology for terahertz imaging is developed, which allows detection and identification of drugs concealed in envelopes, by introducing the component spatial pattern analysis.
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