Journal ArticleDOI
Determination of proximity effect parameters and the shape bias parameter in electron beam lithography
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TLDR
In this article, the authors proposed a method for determining the proximity effect parameters and the shape bias parameter concurrently, and demonstrated the accuracy of the parameters, and the variation of CD errors for Lines and Spaces (L&S) patterns with PEC is less than 4% using the obtained parameters.About:
This article is published in Microelectronic Engineering.The article was published on 2000-06-01. It has received 46 citations till now. The article focuses on the topics: Proximity effect (electron beam lithography).read more
Citations
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Journal ArticleDOI
Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks
Min Tu,Benzheng Xia,Dmitry E. Kravchenko,Max L. Tietze,Alexander John Cruz,Alexander John Cruz,Ivo Stassen,Tom Hauffman,Joan Teyssandier,Steven De Feyter,Zheng Wang,Roland A. Fischer,Benedetta Marmiroli,Heinz Amenitsch,Ana Torvisco,Miriam de J. Velásquez-Hernández,Paolo Falcaro,Paolo Falcaro,Rob Ameloot +18 more
TL;DR: Direct X-ray and electron-beam lithography at sub-50-nm resolution of MOFs is demonstrated that leaves porosity and crystallinity intact and approaches the mesopore regime.
Journal ArticleDOI
Direct Color Printing with an Electron Beam.
Soroosh Daqiqeh Rezaei,Soroosh Daqiqeh Rezaei,Soroosh Daqiqeh Rezaei,Jinfa Ho,Tao Wang,Tao Wang,Seeram Ramakrishna,Joel K. W. Yang,Joel K. W. Yang +8 more
TL;DR: The direct patterning of colors using the bombardment of a focused beam of electrons onto a thin-film stack consisting of polymethyl methacrylate coated with a thin nickel film is demonstrated, resulting directly in a color print without the need for pre-patterned substrates.
Journal ArticleDOI
True three-dimensional proximity effect correction in electron-beam lithography
Kasi Anbumony,Soo-Young Lee +1 more
TL;DR: In this article, a 3D point spread function is used to control the e-beam dose distribution within each circuit feature in order to achieve a desired 3D remaining resist profile after development.
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Electrodes for nanodot-based gas sensors
TL;DR: Some well-established and novel techniques available for fabricating electrodes with spacings similar to nanoparticle diameters are reviewed: photolithography, electron-beam lithography, scanning-probe methods, and ‘electrochemical narrowing’.
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Systematic considerations for the patterning of photonic crystal devices by electron beam lithography
TL;DR: In this article, the influence of stitching error and resist profiles on the pattern quality was analyzed and simple solutions to these problems were presented. And the effect of the stitching error was alleviated by replacing the original access waveguides with taper-added waveguide, and the taper parameters were also discussed to get the optimal choice.
References
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Journal ArticleDOI
Proximity effect in electron-beam lithography
TL;DR: In this article, a simple technique for the computation of the proximity effect in electron-beam lithography is presented, which gives results of the exposure intensity received at any given point in a pattern area using a reciprocity principle.
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Corrections to proximity effects in electron beam lithography. I. Theory
TL;DR: In this article, three corrections techniques are discussed: shape-dimension adjustment, region compensation, and self-consistent technique to compensate for proximity effects in regions between shapes, which leads to computational complexities and impracticalities.
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Energy deposition functions in electron resist films on substrates
Mihir Parikh,David F. Kyser +1 more
TL;DR: In this paper, a Monte Carlo simulation of electron scattering in the resist and substrate of a target in electron lithography was used to obtain the spatial distribution of energy deposition in resist, and analytical approximations were subsequently obtained by a least square fit of Gaussian functions to the forward and backward scattered components of these distributions.
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Validity of double and triple Gaussian functions for proximity effect correction in X-ray mask writing
TL;DR: In this paper, an improved function was proposed to express the deposited energy intensity distribution for fine patterns or that for heavy metals such as X-ray absorbers, and an experimental method was also proposed for obtaining the function parameters, and the optimal parameters were obtained for Si and W-Ti substrates at acceleration voltage of 25 kV.