Journal ArticleDOI
Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination
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TLDR
In this article, a novel method was presented to determine Si-SiO/sub 2/ interface recombination parameters, and the cross-section for capturing electrons was found to exceed the cross section for capturing holes by a factor of 10/sup 2/ to 10 /sup 3.Abstract:
A novel method is presented to determine Si-SiO/sub 2/ interface recombination parameters. The device used is a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current combining at the interface. It was found that the interface recombination parameters depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons was found to exceed the cross-section for capturing holes by a factor of 10/sup 2/ to 10/sup 3/. >read more
Citations
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Journal ArticleDOI
22.8% efficient silicon solar cell
TL;DR: In this paper, a new silicon solar cell structure, the passivated emitter and rear cell, is described, which yields independently confirmed efficiencies of up to 22.8%, the highest ever reported for a silicon cell.
Journal ArticleDOI
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
TL;DR: In this paper, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) have been used for the passivation of p-and n-type crystalline Si (c-Si) surfaces.
Journal ArticleDOI
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
TL;DR: In this article, the authors demonstrate that the surface passivation of Al2O3 can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density.
Journal ArticleDOI
Silicon surface passivation by atomic layer deposited Al2O3
TL;DR: In this article, the level of surface passivation in thin Al2O3 films was determined by techniques based on photoconductance, photoluminescence, and infrared emission.
Journal ArticleDOI
Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface
TL;DR: In this article, the experimentally observed dependence of effective surface recombination velocity Seff at the Si-SiO2 interface on light-induced minority carrier excess concentration is compared with theoretical predictions of an extended Shockley-Read-Hall (SRH) formalism.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
A.S. Grove,D.J. Fitzgerald +1 more
TL;DR: In this article, the surface space-charge region associated with a p-n junction is studied theoretically and experimentally, and the theory of MOS structures is extended to the case where the surface-space charge region is not in equilibrium, which is demonstrated by capacitance and conductance measurements performed on gate-controlled planar silicon diodes.
Book ChapterDOI
Shallow Impurity States in Silicon and Germanium
TL;DR: In this paper, the authors present a review of the current understanding of the shallow acceptor states in silicon and germanium, which are wave packets made up largely of Bloch waves chosen from near the top of the valence band.
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