Journal ArticleDOI
Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
TLDR
In this article, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD).Abstract:
In order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, forward current stress causes reliability degradation due to expansion of the electron-hole recombination-induced stacking faults. Applying the process optimization of the epitaxial layer for the reduction of recombination-induced stacking faults and the body diode screening method to 3.3 kV SiC-MOSFETs, we obtained more stable devices under forward current operation.read more
Citations
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Journal ArticleDOI
Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications
Masayuki Imaizumi,Naruhisa Miura +1 more
TL;DR: In this paper, a reoxidation process was used to improve the ON-resistance of SiC-MOSFETs with a threshold voltage of 2.9 m at 150 °C.
Journal ArticleDOI
3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter
Kenji Hamada,Shiro Hino,Naruhisa Miura,Hiroshi Watanabe,Shuhei Nakata,Eisuke Suekawa,Yuji Ebiike,Masayuki Imaizumi,Isao Umezaki,Satoshi Yamakawa +9 more
TL;DR: In this article, the authors have successfully developed 4H-SiC devices including metaloxide-semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV.
Journal ArticleDOI
Practical applications of SiC-MOSFETs and further developments
TL;DR: In this article, the trade-off between the threshold voltage and channel mobility was reduced by a new gate oxide process and the optimization of the dopant concentration in the drift layer and a reduction of wafer thickness.
Journal ArticleDOI
Investigation of 1200 V SiC MOSFETs' Surge Reliability.
TL;DR: It is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure.
Journal ArticleDOI
Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area
TL;DR: In this paper, a double-pulse switching test using 3.3-kV SiC-MOSFETs was carried out to clarify the failure mechanism of the switching operation of the SiC and the effects of stacking faults on the safe operation area (SOA).
References
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Journal ArticleDOI
Degradation of hexagonal silicon-carbide-based bipolar devices
Marek Skowronski,S. Ha +1 more
TL;DR: In this article, the degradation of silicon carbide high-voltage p-i-n diodes is attributed to the expansion of Shockley-type stacking faults in the part of the devices reached by the electron-hole plasma.
Journal ArticleDOI
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
TL;DR: In this article, it was shown that the recombination-induced stacking faults in high-voltage p-n diodes in SiC can increase the forward voltage drop due to reduction of minority carrier lifetime.
Journal ArticleDOI
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
TL;DR: In this paper, the extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations was investigated by the technique of optical emission microscopy.
Journal ArticleDOI
Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes
J. D. Caldwell,Robert E. Stahlbush,Eugene A. Imhoff,Karl D. Hobart,Marko J. Tadjer,Qingchun Zhang,Anant K. Agarwal +6 more
TL;DR: In this paper, it was shown that the performance degradation of merged-PiN-Schottky diodes, a hybrid device capable of both unipolar and bipolar operation, is caused by recombination-induced stacking fault (SF) creation and expansion.
Journal ArticleDOI
Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
Kenji Hamada,Naruhisa Miura,Shiro Hino,Tsuyoshi Kawakami,Masayuki Imaizumi,Hiroaki Sumitani,Tatsuo Oomori +6 more
TL;DR: In this paper, the effect of n-type doping into the junction field-effect transistor region (JFET doping) on the static characteristics of 4H-SiC metaloxide-semiconductor field effect transistors (MOSFETs) was investigated.