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Device Parameter-Based Analytical Modeling of Power Supply Induced Jitter in CMOS Inverters

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TLDR
In this article, an analytical approach to determine jitter for a CMOS inverter in the presence of power supply noise (PSN) is presented, where the deviation in the transition edge of the output signal from its ideal timing is modeled accurately for each transition.
Abstract
This article presents an analytical approach to determine jitter for a CMOS inverter in the presence of power supply noise (PSN). The deviation in the transition edge of the output signal from its ideal timing is modeled accurately for each transition. A power series method is used to solve differential equations for different regions of transistors during output transition. The PSN has been expressed in Taylor series expression, aids to derive closed-form equation for time interval error (TIE). The obtained results from the proposed methodology closely match with electronic design automation (EDA) simulator results and verified on 40 nm Taiwan Semiconductor Manufacturing Company (TSMC) and 28 nm United Microelectronics Corporation (UMC) foundries, demonstrating accurate modeling of jitter.

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Citations
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Device Parameters Based Analytical Modeling of Ground-Bounce Induced Jitter in CMOS Inverters

TL;DR: In this article, an analytical approach to estimate jitter in CMOS inverters in the presence of ground-bounce noise (GBN) is presented, where the relationship between output and input, considering the effect of ground noise, are derived in terms of device parameters for modeling the timing variations.
Journal ArticleDOI

Device Parameters Based Analytical Modeling of Ground-Bounce Induced Jitter in CMOS Inverters

TL;DR: In this paper , an analytical approach to estimate jitter in CMOS inverters in the presence of ground-bounce noise (GBN) is presented, where the relationship between output and input, considering the effect of ground noise, are derived in terms of device parameters for modeling the timing variations.
Journal ArticleDOI

Analytical Modeling of Deterministic Jitter in CMOS Inverters

TL;DR: In this paper , an analytical approach is presented which estimates jitter in CMOS inverters in the presence of power supply noise (PSN), data noise (DN), and ground-bounce noise (GBN) by deriving analytical relationships.

Development of Knowledge-Based Artificial Neural Networks for Analysis of PSIJ in CMOS Inverter Circuits

TL;DR: In this article , a knowledge-based artificial neural network (ANN) is developed for predicting jitter in CMOS inverter circuits in the presence of power supply noise (PSN), which provides for efficient training in a hybrid approach using input data extracted from both analytical closed-form expressions and a circuit simulator.
Proceedings ArticleDOI

Estimation of PSIJ in CMOS inverters via Knowledge Based Artificial Neural Networks

TL;DR: In this article , a knowledge-based artificial neural network is developed for predicting jitter for a CMOS inverter in the presence of power supply noise (PSN), which provides for efficient training in an hybrid approach using input data extracted from both analytical closed-form expressions as well as a circuit simulator.
References
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Journal ArticleDOI

Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas

TL;DR: In this paper, an alpha-power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced and closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived.
Journal ArticleDOI

A simple MOSFET model for circuit analysis

TL;DR: In this paper, the nth power law MOSFET model is introduced, which can express I-V characteristics of short-channel MOS-FETs at least down to 0.25- mu m channel length and of resistance inserted MOSFLETs.
Journal ArticleDOI

Modeling the influence of the transistor gain ratio and the input-to-output coupling capacitance on the CMOS inverter delay

TL;DR: In this article, an improved model for the ramp response of a CMOS inverter has been derived where the influences of the short-circuit current and the input-to-output coupling capacitance are considered.
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