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Structural and electronic properties of the wide-gap Zn1−xMgxS, Zn1−xMgxSe and Zn1−xMgxTe ternary alloys
Zoulikha Charifi,F. El Haj Hassan,Hakim Baaziz,Sh. Khosravizadeh,S J Hashemifar,Hadi Akbarzadeh +5 more
TL;DR: In this paper, the effect of composition on structural properties such as lattice constants, bulk modulus and bond ionicity was investigated using the full potential linearized augmented plane wave (FP-LAPW) method.
Journal ArticleDOI
Facile colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystal inks with tunable band gaps for use in low-cost photovoltaics
Shu-Hao Chang,Ming-Yi Chiang,Chien-Chih Chiang,Fang-Wei Yuan,Chia-Yu Chen,Bo-Cheng Chiu,Tzu-Lun Kao,Chi-Huang Lai,Hsing-Yu Tuan +8 more
TL;DR: In this paper, the first colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystals across the entire composition range (x,y) = 0 to 1 with band gaps tunable in the range of 0.98 to 2.40 eV by facile chemical synthesis.
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An ab initio study of the electronic structure and optical properties of CdS1-xTex alloys
Yarub Al-Douri,Ali H. Reshak,Hakim Baaziz,Zoulikha Charifi,Rabah Khenata,Syed Awais Ahmad,Uda Hashim +6 more
TL;DR: The structural, electronic and optical properties of cubic CdS1−xTex alloys, with Te-concentrations varying from 0% up to 100% are investigated in this paper.
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Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.
Benjamin L. Greenberg,Shreyashi Ganguly,Jacob T. Held,Nicolaas J. Kramer,K. Andre Mkhoyan,Eray S. Aydil,Uwe Kortshagen +6 more
TL;DR: It is proposed that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces.
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Recent progress in computer-aided materials design for compound semiconductors
TL;DR: In this paper, a review of recent progress in computational materials science in the area of semiconductor materials is reviewed and the latest achievements are presented to illustrate the capability of the theoretical-computational approach by comparing experimental results.