Journal ArticleDOI
Diffusion inhibition against gold of ion beam synthesized buried silicon nitride layers in silicon
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The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested as discussed by the authors.Abstract:
The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested. Buried amorphous layers characteristic for the as-implanted state as well as for postimplantation annealing at 1000°C show diffusion inhibition. This effect was not found for polycrystalline silicon nitride layers produced by annealing at 1200° C.read more
Citations
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Ion beam synthesis of Si3N4 amorphous buried layers
TL;DR: In this article, it was demonstrated that it is possible to prevent the crystallization of buried Si3N4 layers formed by N+ implantation with E = 150 keV, Φ = 50 × 10 17 N + cm 2 and T A = 1200 °C (2 h ).
References
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Journal ArticleDOI
The preparation, characterization and applications of silicon nitride thin films
Journal ArticleDOI
Heavy metal gettering in silicon‐on‐insulator structures formed by oxygen implantation into silicon
T. I. Kamins,S. Y. Chiang +1 more
TL;DR: In this article, the gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated, and the buried oxide does not appear to stop the movement of the Cu.
Journal ArticleDOI
Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles
TL;DR: In this article, annealing leads to the transformation of the Gaussian profiles into rectangular ones if the maximum concentration of the as-implanted distribution does not exceed the value necessary for Si3N4 stoichiometry.
Journal ArticleDOI
Gettering of copper in silicon-on-insulator structures formed by oxygen ion implantation
TL;DR: Copper is inadvertently introduced as an impurity during the formation of silicon-on-insulator structures by high fluence oxygen implantation as mentioned in this paper, which causes the copper to diffuse from the silicon surface through the oxide and be preferentially gettered to dislocations that originate at the oxide-silicon substrate interface.
Journal ArticleDOI
Heavy metal gettering in buried nitride silicon-on-insulator structures
TL;DR: Using Rutherford backscattering spectrometry, the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation as discussed by the authors.