Journal ArticleDOI
Observation of the spin Hall effect in semiconductors.
TLDR
In this paper, the authors detected and imaged electron-spin polarization near the edges of a semiconductor channel with the use of Kerr rotation microscopy, consistent with the predictions of the spin Hall effect.Abstract:
Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effectread more
Citations
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Journal ArticleDOI
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
Journal ArticleDOI
Topological insulators with inversion symmetry
Liang Fu,Charles L. Kane +1 more
TL;DR: In this paper, it was shown that the parity of the occupied Bloch wave functions at the time-reversal invariant points in the Brillouin zone greatly simplifies the problem of evaluating the topological invariants.
Journal ArticleDOI
Berry phase effects on electronic properties
Di Xiao,Ming Che Chang,Qian Niu +2 more
TL;DR: In this paper, a detailed review of the role of the Berry phase effect in various solid state applications is presented. And a requantization method that converts a semiclassical theory to an effective quantum theory is demonstrated.
Journal ArticleDOI
Spin-torque switching with the giant spin hall effect of tantalum
TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
References
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Journal ArticleDOI
Spin-Orbit Coupling Effects in Zinc Blende Structures
TL;DR: In this article, a character table for the group of the wave vector at certain points of symmetry in the Brillouin zone is given, and a possible reason for the complications which may make a simple effective mass concept invalid for some crystals of this type structure is presented.
Journal ArticleDOI
Spin Hall Effect
TL;DR: In this paper, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
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Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
TL;DR: In this article, the spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${a}}{0.48}$As quantum well can be controlled by applying a gate voltage.
Journal ArticleDOI
Universal intrinsic spin Hall effect.
Jairo Sinova,Jairo Sinova,Dimitrie Culcer,Qian Niu,Nikolai A. Sinitsyn,Tomas Jungwirth,Allan H. MacDonald +6 more
TL;DR: It is argued that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic, and the intrinsic spin-Hall conductivity has a universal value for zero quasiparticle spectral broadening.
Journal ArticleDOI
Dissipationless Quantum Spin Current at Room Temperature
TL;DR: In this article, the authors theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs.