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Open AccessJournal ArticleDOI

Edge Spin Current and Spin Polarization in Quantum Hall Regime

Yun-Juan Bao, +3 more
- 16 Dec 2005 - 
- Vol. 72, Iss: 24, pp 245323
TLDR
In this article, the edge spin current and spin polarization in a two-dimensional electron gas with spin-orbit coupling in the presence of a perpendicular magnetic field were studied. And the edge effect removed the degeneracy of Landau levels due to the competition between the Rashba coupling and the Zeeman splitting, which exists in the bulk.
Abstract
We study the edge spin current and spin polarization in a two-dimensional electron gas with spin-orbit coupling in the presence of a perpendicular magnetic field. The edge effect removes the degeneracy of Landau levels due to the competition between the Rashba coupling and the Zeeman splitting, which exists in the bulk. Large spin edge current and non-linear response to an electric field are found when the two levels are degenerated in the bulk. It is found that he spin current is proportional to spin polarization along the y-direction in an finite magnetic field, which provides a way to extract the spin current in the system.

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Citations
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Journal ArticleDOI

Influence of dephasing on the quantum Hall effect and the spin Hall effect

TL;DR: In this paper, the influence of the phase relaxation process on Hall resistance and spin Hall current of a mesoscopic two-dimensional four-terminal Hall cross bar with or without Rashba spin-orbit interaction (SOI) in a perpendicular uniform magnetic field was studied.
Journal ArticleDOI

Electric-field-induced resonant spin polarization in a two-dimensional electron gas

TL;DR: In this paper, the electric response of spin polarization in two-dimensional electron gas with structural inversion asymmetry subjected to a magnetic field was studied by means of the linear and non-linear theory and numerical simulation with the disorder effect.
Journal ArticleDOI

Theory of resonant spin hall effect

TL;DR: In this article, a brief review is presented on the resonant spin Hall effect, where a tiny external electric field induces a saturated spin Hall current in a 2-dimensional electron or hole gas in a perpendicular magnetic field.
Journal ArticleDOI

Theory of resonant spin Hall effect

TL;DR: In this article, a biref review is presented on resonant spin Hall effect, where a tiny external electric field induces a saturated spin Hall current in a 2-dimensional electron or hole gas in a perpendicular magnetic field.
Journal ArticleDOI

In-plane electric field effect on a spin-orbit coupled two-dimensional electron system in presence of magnetic field

TL;DR: In this article, the effect of in-plane electric field on Landau level spacing, spin splitting energy, average spin polarization, and average spin current in the bulk as well as at the edges of a two-dimensional electron system with Rashba spin-orbit coupling is presented.
References
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Journal ArticleDOI

Spintronics: a spin-based electronics vision for the future.

TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI

Spin Hall Effect

TL;DR: In this paper, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
Journal ArticleDOI

Observation of the spin Hall effect in semiconductors.

TL;DR: In this paper, the authors detected and imaged electron-spin polarization near the edges of a semiconductor channel with the use of Kerr rotation microscopy, consistent with the predictions of the spin Hall effect.
Journal ArticleDOI

Quantized Hall conductivity in two dimensions

TL;DR: In this paper, it was shown that the quantization of the Hall conductivity of two-dimensional metals is a consequence of gauge invariance and the existence of a mobility gap, and an estimate of the error based on thermal activation of carriers to the mobility edge is suggested.
Journal ArticleDOI

Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure

TL;DR: In this article, the spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${a}}{0.48}$As quantum well can be controlled by applying a gate voltage.
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