Journal ArticleDOI
Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides
Prakaipetch Punchaipetch,Yukiharu Uraoka,Takashi Fuyuki,Atsushi Tomyo,Eiji Takahashi,Tsukasa Hayashi,Atsushi Sano,Sadayoshi Horii +7 more
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TLDR
In this paper, high performance floating-gate memory devices of Si nanocrystal (NC) dots on HfO2 gate oxide were fabricated at temperatures below 400°C and a large counterclockwise hysteresis of 5.2V at an applied voltage of +6V, and a stored charge density of 6×1012cm−2 were observed.Abstract:
High-performance floating gate memory devices of Si nanocrystal (NC) dots on HfO2 gate oxide were fabricated at temperatures below 400°C. A large counterclockwise hysteresis of 5.2V, at an applied voltage of +6V, and a stored charge density of 6×1012cm−2 were observed. Moreover, the smaller band offset of the high-κ tunneling layer resulted in higher charge tunneling probabilities towards the Si NC dots than those observed with a SiO2 tunneling layer. Advantages in terms of scaling for a high-performance and stable reliability memory device are confirmed.read more
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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
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Applications of atomic layer deposition to nanofabrication and emerging nanodevices
TL;DR: In this paper, the authors review current research trends in ALD processes, focusing on the application of ALD to emerging nanodevices utilizing fabrication through nanotechnology, and present a review of the most recent ALD applications.
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Introducing crystalline rare-earth oxides into Si technologies
TL;DR: In this article, solid-phase epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering, which can further improve the electrical properties of Gd2O3 thin films on Si substrates.
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Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory
TL;DR: In this paper, a monolayer of vertically aligned Au nanoparticles embedded in a dielectric film was fabricated by sandwiching a 3.4-nm-thick Au film between two polyimide (PI) precursor layers.
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Modeling of retention characteristics for metal and semiconductor nanocrystal memories
TL;DR: In this article, a charge retention model was proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment.
References
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Journal ArticleDOI
A silicon nanocrystals based memory
Sandip Tiwari,Farhan Rana,Hussein I. Hanafi,Allan M. Hartstein,Emmanuel F. Crabbé,Kevin K. Chan +5 more
TL;DR: In this paper, a new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) was described, which utilizes direct tunneling and storage of electrons in the nanocrystal.
Journal ArticleDOI
Stable zirconium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: In this paper, the authors demonstrate an equivalent oxide thickness of about 21 A for a 50 A ZrSixOy film sputterdeposited directly on a Si substrate, as measured by capacitance-voltage techniques, with a hysteresis shift less than 10 mV.
Journal ArticleDOI
Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric
TL;DR: In this paper, a silicon nanocrystal memory using chemical vapor deposition (CVD) HfO/sub 2/ high-k dielectrics has been fabricated and characterized for the first time.
Journal ArticleDOI
Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals
TL;DR: In this article, the effect of thermal annealing on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals is investigated by means of capacitancevoltage (C-V) and capacitance decay measurements.
Journal ArticleDOI
Metalorganic Chemical Vapor Deposition of HfO2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen
TL;DR: In this paper, thin films of hafnium oxide were deposited by sequence in which the supply of tetrakis (1-methoxy-2-methyl-2propoxy)-hafnium and remote-plasma oxygen were alternated.
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