Journal ArticleDOI
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
Matteo Meneghini,Antonio Stocco,Nicolo Ronchi,Francesca Rossi,Giancarlo Salviati,Gaudenzio Meneghesso,Enrico Zanoni +6 more
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In this article, an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors (HEMT) submitted to different bias regimes is presented.Abstract:
This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors (HEMT) submitted to different bias regimes. The results described within this paper indicate that: (i) under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; (ii) for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; (iii) for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.read more
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AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction
TL;DR: In this article, a comprehensive review of AlGaN/GaN high electron mobility transistor failure physics and reliability is presented, focusing on mechanisms affecting the gate-drain edge, where maximum electric field and peak temperatures are reached.
Journal ArticleDOI
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
Matteo Meneghini,Antonio Stocco,Marco Bertin,Denis Marcon,Alessandro Chini,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, a detailed analysis of the degradation kinetics of GaN-based high electron mobility transistors submitted to reverse-bias stress is presented, and it is shown that exposure to reverse bias may induce recoverable changes in gate leakage and threshold voltage, due to the accumulation of negative charge within the AlGaN layer, and of positive charge at the GaN/GaN interface.
Journal ArticleDOI
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
TL;DR: In this article, the physical mechanisms responsible for breakdown current in AlGaN/GaN high electron mobility transistors (HEMTs) were reviewed and compared through a critical comparison between experimental data and previously published results.
Journal ArticleDOI
High current-induced degradation of AlGaN ultraviolet light emitting diodes
TL;DR: In this paper, the degradation of AlGaN quantum well-based light emitting diodes emitting at 285 and 310 nm has been studied using electroluminescence, time-resolved photolumininescence and current-voltage experimental techniques.
Journal ArticleDOI
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
TL;DR: In this paper, an extensive analysis of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to on-state and off-state stresses is presented.
References
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Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Ionization Rates for Electrons and Holes in Silicon
TL;DR: In this article, the ionization rates for holes and electrons in silicon have been determined over the following ranges of field: for holes, (2.5-6.0)\ifmmode\times\else\texttimes\fi{}${10}^{5}$ volts
Journal ArticleDOI
Yellow luminescence and related deep states in undoped GaN
Enrique Calleja,F. J. Sanchez,Durga Basak,Miguel Sanchez-Garcia,E. Muñoz,I. Izpura,Fernando Calle,Jose Manuel G. Tijero,José Luis Sánchez-Rojas,Bernard Beaumont,P. Lorenzini,Pierre Gibart +11 more
TL;DR: In this article, a deep trap that captures photoelectrons from the valence band, after being emptied with photons above 2.5 eV, is proposed as the origin of these features.
Journal ArticleDOI
Field-plate engineering for HFETs
TL;DR: In this paper, the analytical approach for designing field plates for reducing the electric field in the channel and at the surface of heterostructure field effect transistors (HFETs) for a given drain voltage, with the smallest possible increase of the gate capacitance, is presented.