Femtosecond x-ray diffraction reveals a liquid–liquid phase transition in phase-change materials
Peter Zalden,Peter Zalden,F. Quirin,Mathias Schumacher,Jan Siegel,Shuai Wei,Azize Koc,Azize Koc,M. Nicoul,Mariano Trigo,Pererik Andreasson,Henrik Enquist,Michael J. Shu,T. Pardini,Matthieu Chollet,Diling Zhu,Henrik T. Lemke,Henrik T. Lemke,Ider Ronneberger,Jörgen Larsson,Aaron M. Lindenberg,Aaron M. Lindenberg,Henry E. Fischer,Stefan P. Hau-Riege,David A. Reis,Riccardo Mazzarello,Matthias Wuttig,Matthias Wuttig,Klaus Sokolowski-Tinten +28 more
TLDR
A liquid–liquid phase transition in the phase-change materials Ag4In3Sb67Te26 and Ge15Sb85 at 660 and 610 kelvin, respectively is found, revealing a relationship between atomic structure and kinetics, enabling a systematic optimization of the memory-switching kinetics.Abstract:
In phase-change memory devices, a material is cycled between glassy and crystalline states. The highly temperature-dependent kinetics of its crystallization process enables application in memory technology, but the transition has not been resolved on an atomic scale. Using femtosecond x-ray diffraction and ab initio computer simulations, we determined the time-dependent pair-correlation function of phase-change materials throughout the melt-quenching and crystallization process. We found a liquid–liquid phase transition in the phase-change materials Ag4In3Sb67Te26 and Ge15Sb85 at 660 and 610 kelvin, respectively. The transition is predominantly caused by the onset of Peierls distortions, the amplitude of which correlates with an increase of the apparent activation energy of diffusivity. This reveals a relationship between atomic structure and kinetics, enabling a systematic optimization of the memory-switching kinetics.read more
Citations
More filters
Journal ArticleDOI
Resistive switching materials for information processing
Zhongrui Wang,Huaqiang Wu,Geoffrey W. Burr,Cheol Seong Hwang,Kang L. Wang,Qiangfei Xia,Jianhua Yang +6 more
TL;DR: This Review surveys the four physical mechanisms that lead to resistive switching materials enable novel, in-memory information processing, which may resolve the von Neumann bottleneck and examines the device requirements for systems based on RSMs.
Journal ArticleDOI
Phase-change heterostructure enables ultralow noise and drift for memory operation
Keyuan Ding,Jiang-Jing Wang,Yuxing Zhou,He Tian,Lu L. Lu,Riccardo Mazzarello,Chun-Lin Jia,Chun-Lin Jia,Wei Zhang,Feng Rao,Feng Rao,Evan Ma +11 more
TL;DR: A phase-change heterostructure that consists of alternately stacked phase- change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing.
Journal ArticleDOI
Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials
Ming Xu,Xianliang Mai,Jun Lin,Wei Zhang,Yi Li,Yuhui He,Hao Tong,Xiang Hou,Peng Zhou,Xiangshui Miao +9 more
Journal ArticleDOI
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
Pierre Noé,Anthonin Verdy,Francesco d'Acapito,Jean-Baptiste Dory,Mathieu Bernard,Gabriele Navarro,Jean-Baptiste Jager,Jérôme Gaudin,Jean-Yves Raty,Jean-Yves Raty +9 more
TL;DR: The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds, which opens the way for design of improved Ots materials and for future types of applications such as brain-inspired computing.
References
More filters
Journal ArticleDOI
X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
TL;DR: In this article, the atomic scattering factors for all angles of coherent scattering and at the higher photon energies are obtained from these tabulated forward-scattering values by adding a simple angle-dependent form-factor correction.
Journal ArticleDOI
Formation of glasses from liquids and biopolymers.
TL;DR: The onset of a sharp change in ddT( is the Debye-Waller factor and T is temperature) in proteins, which is controversially indentified with the glass transition in liquids, is shown to be general for glass formers and observable in computer simulations of strong and fragile ionic liquids, where it proves to be close to the experimental glass transition temperature.
Journal ArticleDOI
Phase-change materials for rewriteable data storage
Matthias Wuttig,Noboru Yamada +1 more
TL;DR: This review looks at the unique property combination that characterizes phase-change materials, in particular the contrast between the amorphous and crystalline states, and the origin of the fast crystallization kinetics.
Journal ArticleDOI
Under what conditions can a glass be formed
TL;DR: The glass-forming tendency of a given material is determined principally by a set of factors which can be specified to some extent in the laboratory, namely, the cooling rate, - T, the liquid volume, v], and the seed density, ps and depending upon the materials constants: the reduced crystal-liquid interfacial tension, α the fraction, f, of acceptor sites in the crystal surface, and the reduced glass temperature, Trg.
Journal ArticleDOI
Phase behaviour of metastable water
TL;DR: In this article, the authors present a comprehensive series of molecular dynamics simulations which suggest that the supercooling anomalies are caused by a newly identified critical point above which the two metastable amorphous phases of ice (previously shown to be separated by a line of first-order transitions) become indistinguishable.