Journal ArticleDOI
Fluorinated graphene: Fluorographene: A Two-Dimensional Counterpart of Teflon (Small 24/2010)
Rahul R. Nair,Wencai Ren,Rashid Jalil,Ibtsam Riaz,Vasyl G. Kravets,L. Britnell,Peter Blake,Fredrik Schedin,A. S. Mayorov,Shengjun Yuan,Mikhail I. Katsnelson,Hui-Ming Cheng,Wlodek Strupinski,Lyubov G. Bulusheva,Alexander V. Okotrub,Irina V. Grigorieva,Alexander N. Grigorenko,Kostya S. Novoselov,Andre K. Geim +18 more
Reads0
Chats0
TLDR
In this article, a stoichiometric derivative of graphene with a fluorine atom attached to each carbon is reported, which inherits the mechanical strength of graphene, exhibiting a Young's modulus of 100 N m−1 and sustaining strains of 15%.Abstract:
A stoichiometric derivative of graphene with a fluorine atom attached to each carbon is reported. Raman, optical, structural, micromechanical, and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >1012Ω) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting a Young’s modulus of 100 N m−1 and sustaining strains of 15%. Fluorographene is inert and stable up to 400 °C even in air, similar to Teflon.read more
Citations
More filters
Journal ArticleDOI
Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.
TL;DR: The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride.
Posted Content
Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate
TL;DR: In this article, the authors demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method and demonstrate that the number of layers range from single layer to a few layers.
Journal ArticleDOI
Graphene: An Emerging Electronic Material
Nathan O. Weiss,Hailong Zhou,Lei Liao,Yuan Liu,Shan Jiang,Yu Huang,Yu Huang,Xiangfeng Duan,Xiangfeng Duan +8 more
TL;DR: The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies.
Journal ArticleDOI
Binary and Ternary Atomic Layers Built from Carbon, Boron, and Nitrogen
Li Song,Zheng Liu,Arava Leela Mohana Reddy,Narayanan Tharangattu Narayanan,Jaime Taha-Tijerina,Juan Peng,Guanhui Gao,Jun Lou,Robert Vajtai,Pulickel M. Ajayan +9 more
TL;DR: The synthesis, characterization, and properties of atomically thin layers, containing B, C, and N, as well as vertically assembled graphene/h-BN stacks are reviewed and the electrical, mechanical, and optical properties of graphene, h-BN, and their hybrid structure are discussed along with the applications of such materials.
Journal ArticleDOI
Electronic structures of silicene fluoride and hydride
Yi Ding,Yanli Wang +1 more
TL;DR: In this paper, the structures and properties of fluorinated and hydrogenated silicene, the silicon analogues of graphane, were investigated using first-principles calculations, and a direct band gap was opened in the silicenes fluoride, and the gap values can be continuously modulated by the strain.