Journal ArticleDOI
Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy
TLDR
In this paper, a GaAs quantum dot array coupled to quantum wire networks is demonstrated, where the GaAs buffer layers are grown on GaAs(001) substrates with SiN x square masks in 400 nm periodicity to [100] and [010] directions.About:
This article is published in Journal of Crystal Growth.The article was published on 1997-01-01. It has received 39 citations till now. The article focuses on the topics: Quantum dot & Quantum wire.read more
Citations
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Journal ArticleDOI
A majority-logic device using an irreversible single-electron box
TL;DR: The gate device is simple in structure and powerful in terms of implementing digital functions with a small number of devices, which will enable the device to contribute to the development of single-electron integrated circuits.
Journal Article
Reaction-Diffusion Systems Consisting of Single-Electron Oscillators
TL;DR: Computer simulation revealed that the proposed single-electron device produces animated spatiotemporal patterns of node voltages, e.g., a rotating spiral pattern similar to that of a colony of cellular slime molds and a dividing-and-multiplying pattern that reminds us of cell division.
Journal ArticleDOI
Selective area growth of GaN/AlN heterostructures
Diethard Marx,Zempei Kawazu,Takeshi Nakayama,Yutaka Mihashi,Tetsuya Takami,Masahiro Nunoshita,Tatsuo Ozeki +6 more
TL;DR: In this paper, a flat and smooth top plane was achieved by optimizing MOCVD growth conditions for GaN/AlN stripes with a flat top-plane top-surface.
Journal ArticleDOI
GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices
TL;DR: In this article, a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy was described.
Journal ArticleDOI
Magnetic field induced metal-insulator transition in a kagome nanoribbon
TL;DR: In this paper, the authors investigated two-terminal electron transport through a finite width kagome lattice nanoribbon in presence of a perpendicular magnetic field and employed a simple tight-binding (T-B) Hamiltonian to describe the system and obtain the transmission properties by using Green's function technique within the framework of Landauer-Buttiker formalism.
References
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Journal ArticleDOI
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Journal ArticleDOI
GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
TL;DR: In this article, a tetrahedral quantum dot (TQD) was proposed to make a zero-dimensional electron-hole system, where the TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates.
Journal ArticleDOI
Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
TL;DR: In this article, a novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated, which consists of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique.
Journal ArticleDOI
InAs-GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties
Dieter Bimberg,Nikolai N. Ledentsov,Marius Grundmann,N. Kirstaedter,Oliver G. Schmidt,Ming-Hua Mao,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov,S. S. Ruvimov,Ulrich Gösele,J. Heydenreich +13 more
TL;DR: In this paper, the authors realized injection lasers based on InAs-GaAs and InGaAs−GaAs quantum pyramids (QPs) with a lateral size ranging from 80 to 140 A.
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Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
TL;DR: In this paper, the selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated, and a blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.
Related Papers (5)
A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
Seiya Kasai,Hideki Hasegawa +1 more