Proceedings ArticleDOI
Fundamental performance limits and scaling of a CMOS passive double-balanced mixer
K. Komoni,Sameer Sonkusale,G. Dawe +2 more
- pp 297-300
TLDR
It is shown that as CMOS process technology evolves, the double-balanced passive mixer architecture will become more favorable and yield improved performance.Abstract:
In this paper, fundamental performance limits and scaling of a double-balanced passive mixer are examined. Analysis of the passive double-balanced mixer will show how its performance metrics are directly affected by the down-scaling of the transistor gate length, LG. We analyze the performance in terms of conversion gain (GC), 1-dB compression point (P1-dB) which we derive, and SSB Noise Figure (NF). We will show that as CMOS process technology evolves, the double-balanced passive mixer architecture will become more favorable and yield improved performance. This is verified through simulation and modeling results for mixers designed in CMOS 350 nm to 32 nm technology. We introduce a mixerpsilas figure-of-merit (FOMMIXER) to compare performance with technology scaling. Circuit designers and system architects can use this paper to find a suitable process technology that will meet their specifications.read more
Citations
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Book ChapterDOI
The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES
TL;DR: In this paper, an expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Proceedings ArticleDOI
300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer
Hiroshi Hamada,Takuya Fujimura,Ibrahim Abdo,Kenichi Okada,Ho-Jin Song,Hiroki Sugiyama,Hideaki Matsuzaki,Hideyuki Nosaka +7 more
TL;DR: A high-isolation fundamental mixer is used in which the matching networks are designed for good RF/IF isolation to simultaneously achieve high conversion gain and feasible module packaging to improve the signal-to-noise-and-distortion-ratio (SNDR) characteristics.
Journal ArticleDOI
300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers
Hiroshi Hamada,Takuya Tsutsumi,Hideaki Matsuzaki,Takuya Fujimura,Ibrahim Abdo,Atsushi Shirane,Kenichi Okada,Go Itami,Ho-Jin Song,Hiroki Sugiyama,Hideyuki Nosaka +10 more
TL;DR: A 300-GHz-band 120-Gb/s wireless transceiver front-ends (TRX) using the in-house InP-based high-electron-mobility-transistor (InP-HEMT) technology for beyond-5G is developed.
Journal ArticleDOI
A Packaged 0.01–26-GHz Single-Chip SiGe Reflectometer for Two-Port Vector Network Analyzers
TL;DR: In this article, a SiGe BiCMOS reflectometer for 0.01-26 GHz two-port vector network analyzers (VNAs) is presented, which is composed of a resistive bridge coupler and two wideband heterodyne receivers for coherent magnitude and phase detection.
Journal ArticleDOI
A 60 GHz Low Power Self-mixing Receiver in 65-nm CMOS for a Radio-Triggered Battery-Less Monolithic Wireless Sensor
TL;DR: A system of radio-triggered batteryless monolithic wireless sensor based on mm-wave wireless power transfer technique is introduced in this work, and the sensitivity of the receiver is improved by applying the IJLO into the self-mixing architecture.
References
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Journal Article
The design of CMOS radio-frequency integrated circuits, 2nd edition
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Book
The Design of CMOS Radio-Frequency Integrated Circuits
TL;DR: In this article, the authors present an expanded and thoroughly revised edition of Tom Lee's acclaimed guide to the design of gigahertz RF integrated circuits, which is packed with physical insights and design tips, and includes a historical overview of the field in context.
Journal ArticleDOI
A precise four-quadrant multiplier with subnanosecond response
TL;DR: Among the most signficant presentations in the 50-year history of the ISSCC, Barrie Gilbert's classic paper has become the fifth most frequently cited JSSC article and the first to be cited over 100 times.
Journal ArticleDOI
RF-CMOS performance trends
Pierre H. Woerlee,M.J. Knitel,R. van Langevelde,D.B.M. Klaassen,L.F. Tiemeijer,A.J. Scholten,A.T.A. Zegers-van Duijnhoven +6 more
TL;DR: In this paper, the impact of scaling on the analog performance of MOS devices at RF frequencies was studied and a scaling methodology for RF-CMOS based on limited linearity degradation was proposed.