Weak‐field magnetoresistance (WFMR) behavior is described for (001) ‐oriented films and surface layers in which the sample current lies along a nonspecial direction in the plane. It is shown that four independent WFMR measurements may be made on one sample in this configuration. For cubic crystals, this permits the Seitz‐Pearson‐Suhl WFMR coefficients b, c, and d to be determined and to be checked for internal consistency. If for any reason, the symmetry of the environment becomes tetragonal (that is, the symmetry axis normal to the film plane becomes distinguishable from the in‐plane symmetry axes), then the four coefficients b, b′, c, and d appropriate for this case may be obtained. In either event, the data are more convenient to measure and are more reliable since they are extracted from a single sample. This new approach seems potentially useful as a sensitive indicator of electronic anisotropy over a broad range of environments, including cubically symmetric transport at one extreme and quantized tw...

Galvanomagnetic effects in semiconductors

Improved weak‐field magnetoresistance analysis for (001) ‐oriented thin films and surface layers with cubic or tetragonal symmetry

Magnetoresistance measurements on epitaxial PbTe, covering a wide range of temperatures and magnetic field intensities, are reported. Nearly all of the results exhibit a common behavior which depends only on μHB, the product of the Hall mobility and magnetic field. The usual quadratic weak‐field dependence is followed by a tendency towards saturation near μHB = 1, and by a linear range for μHB = 10–300. The relevance of sample inhomogeneities, boundary effects, and quantum‐limit magnetoresistance theories is considered. None of these factors seems capable of explaining the general insensitivity of the results to temperature, scattering mechanisms, and sample profile.

Weak‐ and strong‐field magnetoresistance in (111)‐oriented n‐type PbTe epitaxial films between 1.8 and 300 K

Weak‐field magnetoresistance measurements at 297 K were used in conjunction with an appropriate band structure model to detect the substrate‐induced strain in n‐type PbTe epitaxial films grown on BaF2. Evidence of strain in as‐grown films was found. The temperature of the sample was repeatedly cycled from 297 to 4.2 K and back, and the 297‐K strain was found to decrease. At the same time, Hall effect and resistivity measurements show that the 4.2‐K mobility dropped and the 297‐ and 4.2‐K carrier concentrations increased. The observed effects are ascribed to an extended defect density which grows larger as the number of thermal cycles increases.

Thermal cycling‐induced changes in the electrical transport properties of (111) epitaxial, n‐type PbTe films

The photocurrent in crossed fields is characterized by the feedback of the transverse ambipolar drift of the excess carriers on the particle velocities in the longitudinal direction. In extrinsic semiconductors this reduction of the particle velocities may cause a negative photocurrent which is here discussed for the case of low plasma densities considering the influence of the ambipolar particle motions, the diffusion currents, the surface recombination, the bulk lifetime, the sample thickness, and the physical magnetoresistance. Numerical calculations were performed forn-InSb at 85 K.

Galvanomagnetic effects in semiconductors

Citations

Improved weak‐field magnetoresistance analysis for (001) ‐oriented thin films and surface layers with cubic or tetragonal symmetry

Weak‐ and strong‐field magnetoresistance in (111)‐oriented n‐type PbTe epitaxial films between 1.8 and 300 K

Thermal cycling‐induced changes in the electrical transport properties of (111) epitaxial, n‐type PbTe films

Theory of the negative photoconductivity in crossed fields

High-field magnetoresistance and magnetothermal e.m.f. in many-valley semiconductors with ellipsoidal energy surface

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