Galvanomagnetic effects in semiconductors

Ionized Impurity Scattering in n-Type ZnSe from Partial Wave Phase Shifts

In this work the evaluation of the most important transport coefficients (mobility, thermopower, Hall coefficient factor, Lorentz number, magnetoresistance, constant of transversal Nernst-Ettingshausen effect) in the case of combined scattering is presented for strongly degenerated semiconductors. Some relations also were found for the exponent of the energy dependence on relaxation time for polar scattering in case of mobility, Hall coefficient factor and thermopower. By means of Bethe-Sommerfeld series mean values for the two most frequent cases of combined scattering were determined, those for the acoustical mode and ionized impurity scattering and the longitudinal optical mode and ionized impurity scattering.

Evaluation of some transport coefficients for degenerated semiconductors

Annealing of Hall‐mobility changes in n‐type germanium irradiated with 1 MeV electrons at 85°K was investigated using an isochronal technique. Two annealing stages which have been reported earlier were confirmed and separated.One stage at above 100°K is connected with ``contact'' annealing, and a second one close to 140°K is caused by bulk annealing. The latter stage corresponds to the stage found already by J. C. Pigg for gamma irradiation.

Annealing of Hall‐Mobility Changes in Electron‐Irradiated Germanium

The expressions for the Hall conductivity of a spherical quadratic‐band semiconductor for various power‐law scattering mechanisms are evaluated numerically as functions of the Fermi energy. Comparison of these results to curves based on the simple constant‐τ model shows there is only a slight deviation of geometric form which diminishes as the Fermi energy eF approaches the band edge and vanishes as ef moves deep into the band. This similarity explains the fact that the τ=const. model can be used to determine conductivity mobility and carrier density from σxy curves with surprising accuracy over a wide temperature range. Application is made to n‐InSb.

Similarity of Hall‐conductivity integrals for metals and semiconductors

The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and involve assumptions about disorder, localized states, extended states, edge states, Fermi levels pinned by Landau levels, etc. These standard narratives give plausible reasons for the existence of the plateaus, but provide little in the way of even a qualitative understanding of the shape and width of the Hall plateaus, much less a first principles calculation. The injection model presented in this paper changes that situation. Rather than focusing on the middle of the Hall device, we follow the electrons to their source: one corner of the Hall bar and its steep electric field gradients. We find the entire resistivity curve including the Hall plateaus is calculable as a function of magnetic field, temperature, and current. The new higher current experiments reported here show remarkable half integer features for the first time; these are faithfully reproduced by the injection theory. The Hall plateaus and half integer inflections are shown to result from the local density of states appropriate to the magnetic field and the strong electric field gradient at the injection corner.

Galvanomagnetic effects in semiconductors

Citations

Ionized Impurity Scattering in n-Type ZnSe from Partial Wave Phase Shifts

Evaluation of some transport coefficients for degenerated semiconductors

Annealing of Hall‐Mobility Changes in Electron‐Irradiated Germanium

Similarity of Hall‐conductivity integrals for metals and semiconductors

Half integer features in the quantum Hall Effect: experiment and theory

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