An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

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Galvanomagnetic effects in semiconductors

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

In analysis of the Hall effect and conductivity in mixed compounds GaxIn1−xSb, the results of theoretical calculations were compared with the results of experiments in the temperature range 90 to 380 K and in magnetic fields from 0 to 283 kG On the basis of this comparison the scattering processes are discussed and parameters describing them are determined



In einer Analyse des Hall-Effekts und der Leitfahigkeit in der Mischverbindung GaxIn1−xSb werden die Ergebnisse theoretischer Rechnungen mit den Ergebnissen von Experimenten im Temperaturbereich von 90 bis 380 K und Magnetfeldern von 0 bis 28,3 kG verglichen Auf der Grundlage dieses Vergleiches werden die Streuprozesse diskutiert und die sie beschreibenden Parameter bestimmt

Investigations of the Hall effect and conductivity of GaxIn1−xSb

Electrophysical parameters of Hg1−xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the highfrequency sonication ( fUS = 7.5 MHz, WUS ∼ 10 W/m). It was determined that parameters of MBE-grown Hg1−xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed.

Additional excerpts

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Layered structure formation in Hg1−xCdxTe films after high-frequency sonication

Peculiarity of the low temperature magnetoresistive effect in the Corbino disk with magnetic ordering

Absorption, photoconductivity, and Hall effect measurements are discussed for the acceptors B, Al, Ga, In, and Tl in silicon. Most of the problems are demonstrated only for the system Si:In. From the optical measurements we get a fairly good energy level scheme. A satisfactory agreement between the results of optical and electrical experiments is still lacking.

Galvanomagnetic effects in semiconductors

Citations

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Investigations of the Hall effect and conductivity of GaxIn1−xSb

Layered structure formation in Hg1−xCdxTe films after high-frequency sonication

Peculiarity of the low temperature magnetoresistive effect in the Corbino disk with magnetic ordering

“Simple” acceptors B, Al, Ga, In, Tl in silicon

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