Magnetoresistance (MR) measurements is used to extract the electron mobility on strained and unstrained thin film fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transitors (MOSFETs) with channel length down to 40nm, and in a wide temperature range from 300 down to 20K. In particular the signature of Coulomb scattering (CS) on MR mobility is carefully studied and experimentally clarified. We demonstrate that MR mobility corrected for nonstationary effects can be extracted. The mobility data thus corrected for series resistance and ballistic effects show that an additional scattering really occurs in deep-100-nm scaled MOSFETs. This mobility degradation is effective for both strained and unstrained short channel devices, over the whole gate voltage range. The temperature and inversion carrier density dependences, as well as the analysis of the strain effect on mobility reveal a strong additional CS in short channel devices. Despite this dominant mechanism, a mobility gain as high...

Galvanomagnetic effects in semiconductors

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Hall detectors have been used to measure the magnetic field together with its’ fluctuations in the boundary of a tokamak. The results show, that the measurements which have been performed so far, mainly by use of coils together with subsequent integration, either on-line or later by computer, can be substituted by Hall probe measurements giving the desired value of B directly. Because the integration of the coil signal becomes more and more difficult with long pulses, Hall detectors may give advantages in future fusion devices. We implemented a stack of nine Hall detectors mounted on three planes on a rod in such a way, that the three components of the magnetic field can be measured. To avoid capacitive and charge pickup from the plasma, the probes are electrically shielded. The damping due to skin effect within this shield has been taken into account. The probes have been calibrated using a known magnetic field of a straight wire driven with a LC bank. This field has been precisely measured with a Rogows...

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Measurements of magnetic field fluctuations using an array of Hall detectors on the TEXTOR tokamak

Photoelectromagnetic effect in semiconductors and its applications

We propose the combination of magnetoresistance (MR) and Pseudo-MOSFET (Psi-MOSFET) measurements as an improved method for the characterization of silicon-on-insulator (SOI) materials. Measurements were performed on ultrathin SOI Psi-MOSFETs with Corbino geometry by applying high magnetic field and substrate biasing. Several models and extraction methods are developed and compared for an accurate evaluation of electron mobility. In particular, the series resistance effect is removed by using appropriate corrections. The MR mobility can be determined at low or variable electric field. The MR mobility behavior is investigated as a function of effective electric field, temperature, and film thickness. The correlation between the MR mobility and effective mobility, determined in Psi-MOSFETs at zero magnetic field, enables a detailed analysis of the electron transport and scattering mechanisms in the silicon thin film.

methods

The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

Growth of modulation‐doped HgTe–CdTe superlattices (SLs) at very low temperatures (140 °C) by photoassisted molecular beam epitaxy is reported. SL layer thicknesses were intentionally chosen such that most of the SLs studied are inverted‐band semimetals or inverted‐band semiconductors. Both p‐ and n‐type samples were successfully prepared and studied. The doped superlattices exhibit excellent electrical properties. Lack of carrier freeze‐out at low temperatures provides convincing evidence that modulation‐doping has been achieved.

Galvanomagnetic effects in semiconductors

Citations

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Measurements of magnetic field fluctuations using an array of Hall detectors on the TEXTOR tokamak

Photoelectromagnetic effect in semiconductors and its applications

The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

Electrical properties of modulation‐doped HgTe–CdTe superlattices

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