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Galvanomagnetic effects in semiconductors
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The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.read more
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Weak-field magnetoresistance coefficients and the related magnetoresistance skewness effect
TL;DR: In this paper, an overall view of the measurements concerning the galvanomagnetic coefficients in the weak-field case with an attempt to emphasize the physical significance of the results is presented.
Journal ArticleDOI
Microwave Magnetoresistance of Dendritic n‐Type InSb Films
H. H. Wieder,D. J. White +1 more
TL;DR: In this paper, a theoretical analysis of the propagation of a TE10 wave through films covering the cross section of a waveguide was derived subject to the approximation that the resistivity may be treated as a scalar quantity and the attenuation and phase coefficients in the films are equal.
Journal ArticleDOI
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths
D. Yu. Protasov,D. Yu. Protasov,A. K. Bakarov,A. K. Bakarov,A. I. Toropov,A. I. Toropov,B. Ya. Ber,D. Yu. Kazantsev,K. S. Zhuravlev,K. S. Zhuravlev +9 more
TL;DR: In this article, the effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaA/AlGaAs heterostructures with donor-acceptor doping on the mobility of the two-dimensional electron gas is studied.
Journal ArticleDOI
The Electrical Properties of Silicon with Sodium Donors
TL;DR: In this article, the microphysical parameters of sodium donors in silicon are obtained from an investigation of the temperature dependence of the resistivity and the Hall coefficient and the scattering mechanism of the conduction electrons.
Journal ArticleDOI
Four‐coefficient weak‐field magnetoresistance measurements on (111)‐oriented epitaxial n‐type PbTe films at 4.2 K
TL;DR: In this article, a four-coefficient weak-field magnetoresistance measurement technique was applied to (111)oriented n-type PbTe films at 300, 77, and 4.2 K.