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Galvanomagnetic effects in semiconductors

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The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.

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The Voigt-type microwave kerr effect in semiconductors with spherical constant energy surfaces

TL;DR: In this article, a plane wave analysis is given for the free-carrier, microwave magneto-Kerr effect in semiconductors having spherical constant energy surfaces for the case of the applied static magnetic field perpendicular to the propagation direction (Voigt-type Kerr effect).
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Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications

M. Oszwaldowski, +1 more
- 05 Dec 2006 - 
TL;DR: In this paper, the basic parameters of Hall sensor structures obtained from InSb thin films epitaxially grown on insulating GaAs are presented and discussed, and the structures show very low temperature coefficients both of the input/output resistance, α, and the magnetic sensitivity, β, in the temperature range from 1.8 K to 280 K.
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Angular dependence of magnetoresistance and planar Hall effect in semimetals in strong magnetic fields

TL;DR: In this paper, the authors extend the conventional semiclassical theory by considering Landau quantization through the field dependence of carrier density in semimetals, and simultaneously explain the qualitative change in the angular dependence of transverse magnetoresistance (TMR), anisotropic magnetoreistance, and planar Hall effect in bismuth with an increase in the magnetic field.
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Magneto-Surface Experiments on the III-V Compound Semiconductor InSb

TL;DR: In this paper, the electrical conductivity and the Hall coefficient of InSb single crystal specimens with real surfaces are measured as a function of magnetic induction, temperature, and surface potential, and the results indicate that light holes play an important role in the transport process in the surface.
Journal ArticleDOI

Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution

TL;DR: In this paper, it was shown that the Peltier heat, previously regarded as a purely contact characteristic, must be included in the equation describing the heat-flux balance in the volume of a sample (simplified Ioffe-Stil'bans equation).