A novel characterization method using magnetoconductivity tensor components to determine the carrier concentration and mobility of majority and minority carriers is presented. Results are given for bulk n‐HgCdTe (one carrier), liquid phase epitaxial n‐HgCdTe (two carriers), and p‐InSb (two or three carriers). Advantages of this method over the standard Hall coefficient analysis are discussed.

Galvanomagnetic effects in semiconductors

New method of characterizing majority and minority carriers in semiconductors

The semi-metals and narrow-gap semiconductors are characterized by high values of the electron mobility, and sometimes, of the hole mobility too. When both carriers have a high mobility in intrinsic material the bipolar transport effects become prominent. Properties that are particularly sensitive to bipolar conduction are the electronic thermal conductivity and the Nernst and Ettingshausen coefficients. When there is a very large magnetoresistance effect, as there is in some semi-metals at low temperatures, high electric fields can be applied without excessive power dissipation. This allows the observation of an enhanced phonon interaction with carriers that are drifting with the speed of sound, the effect being manifested as a kink in the current-voltage characteristic. Other non-linear effects have been observed at high current densities due to self-magnetic fields of the charge carriers. These and other effects can be influenced by diffusion phenomena associated with the relatively high carri...

Transport effects in semi-metals and narrow-gap semiconductors

The variation of the values of Hall coefficient R and resistance ϱ as a function of magnetic field B is analysed for the case of an n-type semiconductor with electrons in two different sets of conduction band minima. It is shown that both ϱ0/Δϱ and R0/ΔR should be linear functions of B−2 and that the parameters of the separate bands can be determined from the slope and intercept values of such graphs. The appropriate choice of experimental parameters to ensure the required accuracy of band parameters is discussed.



La variation du coefficient de Hall R et de la resistivite ϱ en fonction du champ magnetique B est analysee pour un semiconducteur du type-n avec les electrons dans deux types de minima de la bande de conduction. Il est montre que ϱ0/Δϱ, ainsi que R0/ΔR, doit varier lineaircment en fonction de B−2 et que les parametres de chaque bande peuvent ětre obtenus a partir de la pente et de l'ordonnee a l'origine de ces courbes. Le choix approprie des differents parametres experimentaux pour assurer la precision necessaire dans la determination des parametres de bandes est egalement discute.

Galvanomagnetic effects in semiconductors

Citations

New method of characterizing majority and minority carriers in semiconductors

Transport effects in semi-metals and narrow-gap semiconductors

Analysis of the two-rand hall effect and magnetoresistance

Low-frequency scattering by an imperfectly conducting sphere immersed in a dc magnetic field

Free carrier reflectivity of gray tin single crystals

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