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Galvanomagnetic effects in semiconductors
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The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.read more
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Drift mobility and Hall coefficient factor of holes in germanium and silicon
H. Nakagawa,S. Zukotynski +1 more
TL;DR: In this article, the drift mobility and the Hall coefficient factor were calculated using the Kane band structure model without approximations using acoustic and optical phonon scattering and also impurity scattering.
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Surface states on cleaved (111) silicon surfaces
David E. Aspnes,Paul Handler +1 more
TL;DR: In this article, the authors measured the conductivity changes resulting when single crystal silicon is cleaved in ultrahigh vacuum and showed a high density of surface states on the atomically clean cleaved surface, centered 0.28 ± 0.08 eV above the valence band edge.
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Deformable semiconductors with interfaces: Basic continuum equations
Naoum Daher,Gérard A. Maugin +1 more
TL;DR: In this paper, a nonlinear, rotationally invariant and thennodynamically admissible, continuum theory of deformable semiconductors is presented on the basis of general principles of continuum physics including the effects of singular surfaces and energy-carrying interfaces and a systematic use of virtual power for finite velocity fields.
Journal ArticleDOI
Electrical and galvanomagnetic measurements on thin films and epilayers
TL;DR: In this article, the role of perturbations and errors introduced into the measurements by the finite size of electrodes, by spatially ordered or randomly dispersed conductive or non-conductive inclusions and by inhomogeneities arising during layer growth, impurity diffusion or ion implantation is discussed.
Journal ArticleDOI
Electron mobility in quasi-ballistic Si MOSFETs
J. Łusakowski,Wojciech Knap,Y. M. Meziani,J.-P. Cesso,A. El Fatimy,R. Tauk,Nina Dyakonova,Gerard Ghibaudo,Frederic Boeuf,Thomas Skotnicki +9 more
TL;DR: In this article, the decrease of the electron mobility with the gate length was analyzed within a model taking into account the ballistic motion and an increased scattering in the pockets, and it was shown that these effects are of a comparable magnitude for strong inversion.