Open AccessBook
Galvanomagnetic effects in semiconductors
Reads0
Chats0
About:
The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.read more
Citations
More filters
Book ChapterDOI
Chapter 4 Far-Infrared Photoconductivity in High Purity GaAs
TL;DR: In this article, the authors discuss the properties of shallow donor levels in GaAs obtained from these measurements as well as performance that is achieved with GaAs extrinsic photoconductive detectors.
Journal ArticleDOI
Semi-metallic behaviour of HMTSF-TCNQ at low temperatures under pressure
TL;DR: In this article, electrical resistivity and transverse magnetoresistance measurements on single crystals of the charge transfer compound HMTSF-TCNQ under pressure are reported, showing that dϱ/d T remains positive over the whole temperature range under pressure, and that a T 2 law is obeyed from 0.19 to 2 K at 14 kbar.
Journal ArticleDOI
Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors
Yahya Moubarak Meziani,Jerzy Łusakowski,Wojciech Knap,Nina Dyakonova,Frederic Teppe,K. Romanjek,M. Ferrier,Raphael Clerc,Gerard Ghibaudo,Frederic Boeuf,Thomas Skotnicki +10 more
TL;DR: In this paper, high-field magnetoresistance measurements were performed on short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field effect transistors.
Journal ArticleDOI
Geometrical magnetoresistance and hall mobility in gunn effect devices
T.R. Jervis,E.F. Johnson +1 more
TL;DR: In this article, the relationship between the Hall mobility and the magnetoresistance mobility is determined experimentally for GaAs at room temperature, and the ratio is found to beμm/μH = 1.03±0.07.
Book ChapterDOI
Chapter 2 Mobility of Holes in III-V Compounds
TL;DR: In this paper, a qualitative or semi-quantitative understanding of the factors that determine hole mobilities is explored, which suggests improvements in the phenomenological expressions presented in the chapter, and allow an assessment of the use of the Matthiessen's rule in combining holemobilities.