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Galvanomagnetic effects in semiconductors

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The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.

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Journal ArticleDOI

Temperature dependence of the Hall factor and the conductivity mobility in p‐type silicon

TL;DR: In this article, the authors measured the Hall coefficient of ultra pure p-type silicon as a function of both magnetic field and temperature in the range 20-50 K, where acoustic phonon scattering dominates.
Journal ArticleDOI

Weak antilocalization and spin-orbit interaction in a In0.53Ga0.47As/InP quantum well in the persistent photoconductivity state

TL;DR: In this article, low-field quantum magnetoresistance of two-dimensional electron gas at the In053Ga047As/InP interface was studied in the persistent photoconductivity state.
Journal ArticleDOI

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

TL;DR: In this article, it was shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistors channel, while the access/contact resistances and the transistor gate length need not be known.
Journal ArticleDOI

Weak‐field magnetoresistance in noncubic (111)‐oriented epitaxial films of n‐type PbTe

TL;DR: In this article, measurements of weak field magnetoresistance (WFMR) were carried out at 300 and 77 K on two n-type PbTe epitaxial films, 4 and 10 μm thick.
Book ChapterDOI

Optimisation and Selection of Semiconductor Thermoelements

TL;DR: In this article, the principles for choosing materials and for improving their thermoelectric properties are discussed, and the quantity known as the power factor is defined and it is shown how it can change with the Fermi energy.