Open AccessBook
Galvanomagnetic effects in semiconductors
Reads0
Chats0
About:
The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.read more
Citations
More filters
Journal ArticleDOI
A problem with directional derivative in the theory of galvanomagnetic effects
TL;DR: In this paper, an asymptotics of the solution of the Laplace equation in a "long" rectangle with the directional derivative given on its long sides and Dirichlet data on its short sides was constructed.
Journal ArticleDOI
Comparison of Si and GaAs integrated magnetotransistors
TL;DR: In this article, a comparison of the properties of Si and GaAs multidrain field effect transistors, also named MAGFETs, is presented. And the results show that the relative drain-current sensitivity of GaAs-MESFET can reach 50-60%/T.
Journal ArticleDOI
The hypothesis of charge components of the conductivity of a GaAs molecular beam epitaxy epi-layer
A. Wolkenberg,T. Przesławski +1 more
TL;DR: In this paper, the authors proposed a method to calculate the fraction of total conductivity based on the conductivities of a GaAs molecular beam epitaxy (MBE) epi-layer.
Journal ArticleDOI
Rapid thermal annealing of LPCVD-SOI substrates for sensor applications
TL;DR: In this article, the electrical properties of highly implanted LPCVD polysilicon films (4 × 10 14, 8 × 10 13 and 5 × 10 15 cm −2 ) using Hall techniques are compared with those obtained on conventional annealed (CTA) films.
Journal ArticleDOI
Electrical and piezoresistive properties of boron-implanted ZMR-SOI films
TL;DR: In this paper, the electrical properties of polycrystalline deposited zone-melt-recrystallized (ZMR) and boron-implanted silicon films between 4 and 400 K and their piezoresistivity at room temperature were investigated.