The contact resistance is a very important parameter which affects the device efficiency to a great extent. Since the technological process during the sample preparation may alter the electrical parameters, there is a constant need for methods which enable a scrutin of the influence of these parameters on the device structure. Here a galvanomagnetic method is used to separate the bulk and the contact resistances of a device. Using the observation of the field-dependent magnetoresistance the carrier mobility is established and by measuring the angle-dependent magnetoresistance the bulk and contact resistances of the Gunn diode at a constant magnetic field intensity could be separated. The main advantages of the proposed method are: (a) no technological preparation is needed (the diodes are measured only in the lower part of encapsulation), (b) measurement is possible on a complete device, (c) the measuring technique is simple, fast, and accurate.



Der Kontaktwiderstand ist ein wichtiger Parameter, der den Wirkungsgrad eines Bauelements entscheidend beeinflust. Da der technologische Prozes der Probenherstellung die elektrischen Parameter verandern kann, sind Methoden notig, die den Einflus dieser Parameter auf die Strukturen der Bauelemente genau feststellen. Es wird eine galvanomagnetische Methode benutzt, um Volumen- und Kontaktwiderstande zu trennen. Aus dem feldabhangigen Magnetwiderstand wird die Ladungstrager-beweglichkeit ermittelt und aus der Winkelabhangigkeit des Magnetwiderstandes konnen Volumen- und Kontaktwiderstande der Gunn-Diode im konstanten Magnetfeld getrennt werden. Die wesentlichen Vorzuge der vorgeschlagenen Methode sind: (a) keine spezielle Technologie ist erforderlich, (b) Messungen an vollstandigen Bauelementen sind moglich, (c) die Mestechnik ist einfach, schnell und genau.

Galvanomagnetic effects in semiconductors

Characterization of Gunn GaAs Diodes by Galvanomagnetic Methods

MEASUREMENT OF THE HALL COEFFICIENT AND ELECTRON MOBILITY USING VAN DER PAUW TYPE HALL EFFECT MEASUREMENTS

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Measurement of the Hall coefficient and electron mobility using Van Der Pauw type Hall effect measurements

The longitudinal and transverse components of the magnetoconductivity tensor have been calculated for degenerate p-type lead telluride for the parabolic and non-parabolic, non-ellipsoidal band models. The results obtained on the basis of these two models are compared for acoustic, optical, and impurity scattering mechanisms assuming a scalar isotropic relaxation time. It is shown that the importance of acoustic scattering increases relative to optical scattering when the bands become non-parabolic and energy surfaces non-ellipsoidal.



Die longitudinalen und transversalen Komponenten des Magnetoleitfahigkeitstensors wurden fur entartetes p-leitendes Bleitellurid fur die Falle parabolischer und nichtparabolischer, nichtelliptischer Bandmodelle berechnet. Die auf der Basis dieser beiden Modelle erhaltenen Ergebnisse werden fur akustische und optische Streumechanismen und Defekt-streumechanismen verglichen, wobei eine skalare isotrope Relaxationszeit angenommen wird. Es wird gezeigt, das die Bedeutung der akustischen Streuung relativ zur optischen Streuung ansteigt, wenn die Bander nichtparabolisch und die Energieflachen nichtelliptisch werden.

Galvanomagnetic Coefficients for p-Type Lead Telluride

Conductance at InAs, InGaAs and GaAs MBE Epi-layers

A set of integrals which appear in the theory of the magnetoconductivity of semiconductors is discussed. The similarity of all of the integrals to those obtained for neutral impurity scattering is exploited to obtain numerical approximations valid for all values of magnetic field. The form of the approximations is well suited to iterative computer procedures used in curve fitting.

Galvanomagnetic effects in semiconductors

Citations

Characterization of Gunn GaAs Diodes by Galvanomagnetic Methods

Measurement of the Hall coefficient and electron mobility using Van Der Pauw type Hall effect measurements

Galvanomagnetic Coefficients for p-Type Lead Telluride

Conductance at InAs, InGaAs and GaAs MBE Epi-layers

A practical approximation to integrals appearing in the theory of the magnetoconductivity of semiconductors

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